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  igbt 900v Datasheet PDF File

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    IRG4PF50W-EPBF IRG4PF50W

International Rectifier
Vishay Intertechnology, Inc.
Part No. IRG4PF50W-EPBF IRG4PF50W
Description 900v Warp 20-100 kHz Discrete igbt in a TO-247AC package
51 A, 900 V, N-CHANNEL igbt, TO-247AD TO-247AD, 3 PIN

File Size 141.70K  /  8 Page

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    IXYA8N90C3D1

IXYS Corporation
Part No. IXYA8N90C3D1
Description 900v XPTTM igbt

File Size 333.95K  /  7 Page

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    IRGPF30F

International Rectifier
Part No. IRGPF30F
Description 900v Discrete igbt in a TO-3P (TO-247AC) package

File Size 105.12K  /  6 Page

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    IRGPF20F

International Rectifier
Part No. IRGPF20F
Description 900v Discrete igbt in a TO-3P (TO-247AC) package

File Size 107.69K  /  6 Page

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    IRG4PF50WD

International Rectifier
Part No. IRG4PF50WD
Description 900v Warp 20-100 kHz Copack igbt in a TO-247AC package

File Size 260.68K  /  10 Page

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    STGW30N90D GW30N90D

STMicroelectronics N.V.
Part No. STGW30N90D GW30N90D
Description N-channel 900v - 30A - TO-247 Very fast PowerMESH igbt N沟道900v - 30A47 igbt的非常快速PowerMESH

File Size 139.56K  /  10 Page

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    IRGPF50F 2003 IRGPF50

International Rectifier
Part No. IRGPF50F 2003 IRGPF50
Description 900v Discrete igbt in a TO-3P (TO-247AC) package
INSULATED GATE BIPOLAR TRANSISTOR
From old datasheet system

File Size 109.05K  /  6 Page

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    IRFBF20L IRFBF20S IRFBF20STRL IRFBF20STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFBF20L IRFBF20S IRFBF20STRL IRFBF20STRR
Description Power MOSFET(Vdss=900v, Rds(on)=8.0ohm, Id=1.7A) 功率MOSFET(减振钢板基本\u003d 900v,的Rds(on)\u003d 8.0ohm,身份证\u003d 1.7A
900v Single N-Channel HEXFET Power MOSFET in a TO-262 package
900v Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 307.93K  /  10 Page

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    Motorola, Inc.
Motorola Inc
Motorola Mobility Holdings, Inc.
Part No. MC68HCL05C8 MC68HSC05C8 68HC705C8 MC68HC05C8 MC68HCL05C4 MC68HSC05C4 MC68HC805C4 MC68HC705C8 MOTOROLAINC.-MC68HCL05C8
Description TRANSISTOR,igbt,N-CHAN,1.2kV V(BR)CES,25A I(C),TO-264AA
igbt; Continuous Collector Current, Ic:60A; Collector Emitter Saturation Voltage, Vce(sat):24V; Power Dissipation, Pd:200W; Collector Emitter Voltage, Vceo:900v; Transistor Polarity:N Channel
PROGRAMMING REFRERENCE GUIDE 编程REFRERENCE指南

File Size 3,416.45K  /  64 Page

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    IRFPF30

International Rectifier, Corp.
Part No. IRFPF30
Description 900v Single N-Channel HEXFET Power MOSFET in a TO-247AC package
HEXFET? Power MOSFET
Power MOSFET(Vdss=900v, Rds(on)=3.7ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 900v,的Rds(on)\u003d 3.7ohm,身份证\u003d 3.6A

File Size 164.29K  /  6 Page

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