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  -75 s Datasheet PDF File

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    1.5SMC68AT3 1.5SMC24AT3 1.5SMC51AT3 1.5SMC30AT3 1.5SMC13AT 1.5SMC56AT3 1.5SMC33AT3 1.5SMC12AT3 1.5SMC10AT3 1.5SMC15AT3G

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ONSEMI[ON Semiconductor]
Part No. 1.5sMC68AT3 1.5sMC24AT3 1.5sMC51AT3 1.5sMC30AT3 1.5sMC13AT 1.5sMC56AT3 1.5sMC33AT3 1.5sMC12AT3 1.5sMC10AT3 1.5sMC15AT3G 1.5sMC7.5AT3 1.5sMC8.2AT3 1.5sMCXXXAT3 15sMC68AT3 1.5sMCXXXAT3G 1.5sMC11AT3 1.5sMC13AT3 1.5sMC15AT3 1.5sMC16AT3 1.5sMC18AT3 1.5sMC20AT3 1.5sMC22AT3 1.5sMC27AT3 1.5sMC36AT3 1.5sMC39AT3 1.5sMC43AT3 1.5sMC47AT3 1.5sMC6.8AT3 1.5sMC62AT3G 1.5sMC82AT3 1.5sMC9.1AT3 1.5sMC91AT3 1.5sMC62AT3 1.5sMC16A 1.5sMC22A 1.5sMC24A 1.5sMC27A 1.5sMC43A 1.5sMC47A 1.5sMC51A 1.5sMC56A 1.5sMC68A 1.5sMC82A 1.5sMC15A 1.5sMC62A 1.5sMC75A 1.5sMC75AT3
OCR Text ...Tstg Value 1500 4.0 54.6 18.3 0.75 6.1 165 200 -65 to +150 Unit W W mW/C C/W W mW/C C/W A C Maximum ratings are those values beyond which...s A NOTEs: 1. DIMENsIONING AND TOLERANCING PER ANsI Y14.5M, 1982. 2. CONTROLLING DIMENsION: INCH. 3...
Description Zener Diode
Transistor suppressor
High Power
1500 Watt Peak Power Zener Transient Voltage suppressors
ELR 2/1-230Z
1500 Watt Peak Power Zener Transient Voltage suppressors 1500 W, UNIDIRECTIONAL, sILICON, TVs DIODE

File Size 73.47K  /  8 Page

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    1N6637US 1N5969US 1N5968US 1N6632US 1N6633US 1N6634US 1N6635US 1N6636US

CDI-DIODE[Compensated Deuices Incorporated]
Compensated Devices Incorporated
Part No. 1N6637Us 1N5969Us 1N5968Us 1N6632Us 1N6633Us 1N6634Us 1N6635Us 1N6636Us
OCR Text ... 400 400 1000 VOLTs 0.90 0.80 0.75 0.70 0.60 0.50 0.4 0.5 MAXIMUM ZENER IMPEDANCE TYPE ZZ@IZT ZZK(1) @ IZK=5mA MAXIMUM REVERsE LEAKAGE CURRENT VOLTAGE DIM D F G s sURGE CURRENT IZsM AMPs 20.0 18.7 17.6 16.4 15.3 14.4 20 20 ...
Description 5 WATT ZENER DIODEs
Zener Diodes(齐纳二极
surface mount silicon Zener diodes

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    22SC5405 2SC5405

PANASONIC[Panasonic Semiconductor]
PanasonicSemiconductor
Panasonic Corporation
Part No. 22sC5405 2sC5405
OCR Text ...E(sat) fT ton tstg tf V V 75 0.3 3.5 0.9 MHz s s s *h FE Rank classification P Q Rank hFE 800 to 1500 500 to 1000 1 Power Transistors IC -- VCE 1.0 TC=25C 5 6 VCE=4V TC=25C 2sC5405 IC -- VBE Collector t...
Description &nbsp;&nbsp;&nbsp;silicon NPN triple diffusion planar type
siliconNPNtriplediffusionplanartype

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    2764A M27C64A-30C1TR M27C64A-30C1X M27C64A-30C6TR M27C64A-30C6X M27C64A-30F1TR M27C64A-30F1X M27C64A-30F6TR M27C64A-30F6

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
Part No. 2764A M27C64A-30C1TR M27C64A-30C1X M27C64A-30C6TR M27C64A-30C6X M27C64A-30F1TR M27C64A-30F1X M27C64A-30F6TR M27C64A-30F6X M27C64A-20C1TR M27C64A-20C1X M27C64A-20C6TR M27C64A-20C6X M27C64A-25C1TR M27C64A-25F6X M27C64A-25F6TR M27C64A-15C6X M27C64A-15F1X M27C64A-15F6X M27C64A-15C1TR M27C64A-15F6TR M27C64A-15C6TR M27C64A-15F1TR M27C64A-20F1TR M27C64A-25F1X M27C64A-25F1TR M27C64A-25C1X M27C64A-25C6TR M27C64A-25C6X M27C64A-15C1X
OCR Text ...= VIL, G = VIL 0 0 0 150 150 75 50 50 0 0 0 200 200 80 50 50 0 0 0 250 250 100 60 60 0 0 0 300 300 120 105 105 ns ns ns ns ns...s s s s s ms ms s s ns ns ns tPHQX tQXGL tGLQV tGHQZ (2) tDH tOEs tOE tDFP tAH tGHAX No...
Description 64K (8K x 8) UV EPROM and OTP ROM 64K的(8K的8)紫外线EPROM和检察官办公室光

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    2SA1031 2SA1032 2SA1031B 2SA1031D

HITACHI[Hitachi Semiconductor]
Microsemi, Corp.
Part No. 2sA1031 2sA1032 2sA1031B 2sA1031D
OCR Text ...IC (mA) IC = 10 IB = Ta C 75 25 5 Unit: mm 4.8 0.3 3.8 0.3 2.3 Max 0.5 0.1 0.7 0.60 Max 12.7 Min 5.0 0.2 0...s or any third party's patent, copyright, trademark, or other intellectual property rights for infor...
Description silicon PNP Transistor
silicon PNP Epitaxial
5-Pin µP supervisory Circuits with Watchdog and Manual Reset
5-Pin &#181;P supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路

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    2SA1052

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2sA1052
OCR Text ... -- -- -- -0.5 -0.5 500 -0.2 -0.75 Unit V V V A A Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -2...s or any third party's patent, copyright, trademark, or other intellectual property rights for infor...
Description silicon PNP Epitaxial 硅外延进步党

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    2SA1122

HITACHI[Hitachi Semiconductor]
Part No. 2sA1122
OCR Text ... -- -- -- -0.5 -0.5 800 -0.5 -0.75 Unit V V V A A Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -3...s or any third party's patent, copyright, trademark, or other intellectual property rights for infor...
Description silicon PNP Transistor
silicon PNP Epitaxial

File Size 23.23K  /  5 Page

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    2SA1171

HITACHI[Hitachi Semiconductor]
Part No. 2sA1171
OCR Text ...- 200 1.6 Max -- -0.5 800 -0.75 -0.5 -- -- Unit V A Test conditions I C = -1 mA, RBE = VCB = -75 V, IE = 0 VCE = -12 V, IC = -2 mA...s or any third party's patent, copyright, trademark, or other intellectual property rights for infor...
Description silicon PNP Epitaxial

File Size 23.17K  /  5 Page

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    2SA1190 2SA1191

HITACHI[Hitachi Semiconductor]
Part No. 2sA1190 2sA1191
OCR Text ...200 100 50 -1.0 Ta = -25C 75 -0.3 20 10 -0.5 -1.0 -2 -5 -10 -20 Collector Current IC (mA) -0.1 -1 -3 -10 -30 Collector Cur...s or any third party's patent, copyright, trademark, or other intellectual property rights for infor...
Description silicon PNP Epitaxial

File Size 44.42K  /  10 Page

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    2SA1193 2SA1193K

HITACHI[Hitachi Semiconductor]
Part No. 2sA1193 2sA1193K
OCR Text ...tor Current IC (mA) -1,000 Ta = 75 C 25 C -400 -40 -300 P C = -20 0. 9W -200 -10 -100 -5 A IB = 0 0 -2 -4 -6 -8 -10 C...s) 10 3 1.0 tstg 0.3 0.1 0.03 -0.1 -10 0.01 -10 IC = 500 IB Ta = 25C -100 -300 -30 Collector Curret ...
Description silicon PNP Epitaxial/ Darlington
silicon PNP Epitaxial, Darlington

File Size 33.83K  /  6 Page

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