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  190w Datasheet PDF File

For 190w Found Datasheets File :: 20    Search Time::1.188ms    
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    MK18-B-190W

Meder Electronic
Part No. MK18-B-190w
OCR Text ...Nr.: 9182000194 Artikel: MK18-B-190w Magnetische Eigenschaften Anzug Prufmittel Anzug in milliTesla Bedingung bei 20 C phys. bedingte Toleranz +/- 0,1mT Min Soll KMS-13 Max Einheit Produktspezifische Daten Kontakt ...
Description MK Reed Sensors

File Size 64.69K  /  1 Page

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    NJM12904 NJM12904D NJM12904E NJM12904L NJM12904M NJM12904R NJM12904V PHA2731-190M

MA-Com
MACOM[Tyco Electronics]
Analog Devices, Inc.
Part No. NJM12904 NJM12904D NJM12904E NJM12904L NJM12904M NJM12904R NJM12904V PHA2731-190M
OCR Text ... 2.9, 3.1 GHz VCC = 38V, POUT = 190w, f = 2.7, 2.9, 3.1 GHz VCC = 38V, POUT = 190w, f = 2.7, 2.9, 3.1 GHz VCC = 38V, POUT = 190w, f = 2.7, 2.9, 3.1 GHz VCC = 38V, POUT = 190w, f = 2.7, 2.9, 3.1 GHz VCC = 38V, POUT = 190w, f = 2.7, 2.9, 3.1 ...
Description Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz / 200s Pulse / 10 Duty
Radar Pulsed Power Amplifier-190 Watts 2.7-3.1GHz,200ms Pulse,10% Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200s Pulse, 10 Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200レs Pulse, 10 Duty 雷达脉冲功率Amplifier.190.7.3.1千兆赫,200レ拧脉冲10职务

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    PHA2731-190M

M/A-COM Technology Solutions, Inc.
Part No. PHA2731-190M
OCR Text 190w, 2.7-3.1 GHz, 200s Pulse, 10% Duty Features * * * * * * Input and output matched to 50 RC bias circuit included Dual NPN silicon class C power transistors Soft substrate R = 10.5 Hermetic Package Nickel plated copper flange M/A-CO...
Description Radar Pulsed Power Amplifier

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    FAP-450

TOKO, Inc.
Fuji Electric
Part No. FAP-450
OCR Text ...MOS-FET 500V 0,38 14A 190w > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless oth...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14A I(D) | TO-247VAR 晶体管| MOSFET的| N沟道| 500V五(巴西)直|4A条(丁)|47VAR
N-channel MOS-FET(500V, 0,38Ω, 14A, 190w)
N-channel MOS-FET(500V, 0,38楼?, 14A, 190w)

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    STB12NK80Z STB12NK80Z07 STP12NK80Z STW12NK80Z

STMicroelectronics
Part No. STB12NK80Z STB12NK80Z07 STP12NK80Z STW12NK80Z
OCR Text ...00V ID PW <0.75 10.5 A 190w <0.75 10.5 A 190w 1 3 2 <0.75 10.5 A 190w TO-220 3 1 TO-247 Extremely high dv/dt capability Improved esd capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitanc...
Description N-channel 800V - 0.65Ω - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH?/a> Power MOSFET
N-channel 800V - 0.65Ω - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH Power MOSFET
N-channel 800V - 0.65楼? - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH垄芒 Power MOSFET
N-channel 800V - 0.65ヘ - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH⑩ Power MOSFET

File Size 495.98K  /  16 Page

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    HDP-190

Mean Well Enterprises Co., Ltd.
Part No. HDP-190
OCR Text ....8v(v1-v2 0.8v) . h d p - 1 9 0 190w dual output with pfc function 0.95kg; 15pcs/15.3kg/0.7cuft 86% 95 5 (tsw1) detect on heatsink of power transistor file name:hdp-190-spec 2011-12-28 v1 v2 output number dc voltage rated current current ...
Description 190w Dual Output with PFC Function

File Size 330.58K  /  2 Page

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    HDP-19012

Mean Well Enterprises Co., Ltd.
Part No. HDP-19012
OCR Text ....8v(v1-v2 0.8v) . h d p - 1 9 0 190w dual output with pfc function 0.95kg; 15pcs/15.3kg/0.7cuft 86% 95 5 (tsw1) detect on heatsink of power transistor file name:hdp-190-spec 2012-02-29 v1 v2 output number dc voltage rated current current ...
Description 190w Dual Output with PFC Function

File Size 330.40K  /  2 Page

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    Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. SPP80N06S2L-09 SPB80N06S2L-09
OCR Text ... 3.5 3.9 4.1 4.5 10.0 Ptot = 190w i 28 SPP80N06S2L-09 A 160 140 d e f g h 24 22 h R DS(on) 20 18 16 14 12 10 ID 120 100 80 60 40 20 0 0 1 2 3 4 5 g e f g f h i e d 8 i 6 4...
Description Low Voltage MOSFETs - TO220/263; 80A; 55V; LL; 8.5mOhm
OptiMOS Power-Transistor 的OptiMOS功率晶体

File Size 310.79K  /  8 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. UP-RW1220P1
OCR Text ...Control voltage 60W 95W 120W 190w Approx. 35m 102% 100% 85% 65% 91% 82% 64% 1.35 A or smaller 13.6V to 13.8V (per 12V cell (25C) Duration of discharge (min.) Duration of discharge vs. Discharge current 1,500 1,200 1,000 (Note) ...
Description VALVE-REGULATED LEAD ACID BATTERIES

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    NTE[NTE Electronics]
Part No. NTE2376
OCR Text .... . . . . . . . . . . . . . . . 190w Derate Linearly Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W/C Gate-to-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . ...
Description MOSFET N-Ch, Enhancement Mode High Speed Switch

File Size 28.56K  /  3 Page

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For 190w Found Datasheets File :: 20    Search Time::1.188ms    
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