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  230m rl Datasheet PDF File

For 230m rl Found Datasheets File :: 7    Search Time::1.546ms    
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    Analogic Tech
Part No. AAT4612
OCR Text ...n 2, IMAX = (115 - 85) = 0.93A (230m x 150) ON In many systems, power planes are controlled by integrated circuits which run at lower voltages than the power plane itself. The enable input (ON) of the AAT4612 has low and high threshold ...
Description From old datasheet system
Current Limited Load Switch

File Size 155.36K  /  10 Page

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    Maixm
Part No. MAX2100SUBCIRCUITS
OCR Text ...z. Cell Dimensions: 2 x [300m x 230m] X2111 DUAL BALANCED DEMODULATOR KEY ELECTRICAL CHARACTERISTICS (TA = 0C to +70C, unless otherwi...rl = 1k, CL = 2pF PORT LIST PORT NAME VCC VEE SUB IP IPB K250 P250 MIX(I/Q) +5V supply Ground Su...
Description Quadrature Digitizer Circuits

File Size 71.57K  /  8 Page

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    APM3195PD APM3195PDC-TR APM3195PDC-TRL APM3195PDC-TU APM3195PDC-TUL

ANPEC[Anpec Electronics Coropration]
Part No. APM3195PD APM3195PDC-TR APM3195PDC-Trl APM3195PDC-TU APM3195PDC-TUL
OCR Text 230m(Typ.) @ VGS=-10V RDS(ON)=385m(Typ.) @ VGS=-4.5V Pin Description G D S * * * Super High Dense Cell Design Reliable and Rugge...rl=15, IDS=-1A, VGEN=-10V, RG=6 ns a : Pulse test ; pulse width300s, duty cycle2%. b : Guarant...
Description P-Channel Enhancement Mode MOSFET

File Size 112.49K  /  10 Page

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    SSM6J26FE

Toshiba Semiconductor
Part No. SSM6J26FE
OCR Text ...ckages Low on-resistance: Ron = 230m (max) (@VGS = -4 V) Ron = 330m (max) (@VGS = -2.5 V) Ron = 980m (max) (@VGS = -1.8 V) Unit: mm 1.60....rl VDD -2.5 V 90% OUT (b) VIN 0V 10% -2.5V 10 s (c) VOUT VDS (ON) 90% 10% t...
Description High Speed Switching Applications

File Size 153.78K  /  5 Page

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    SSM6P26TU

Toshiba Semiconductor
Part No. SSM6P26TU
OCR Text ...ckages Low on-resistance: Ron = 230m (max) (@VGS = -4 V) Ron = 330m (max) (@VGS = -2.5 V) 0.65 0.65 2.00.1 2.10.1 1.70.1 +0.1 0.3-0.05 R...rl VDD -2.5 V 90% OUT (b) VIN 0V 10% -2.5V 10 s (c) VOUT VDS (ON) 90% 10% t...
Description High Speed Switching Applications

File Size 146.66K  /  6 Page

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    CEM6200

Chino-Excel Technology
Part No. CEM6200
OCR Text 230m @VGS = 10V. RDS(ON) = 270m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capabili...rl D VOUT td(on) VOUT 10% VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area ...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 403.54K  /  4 Page

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    SSM3J108TU

Toshiba Semiconductor
Part No. SSM3J108TU
OCR Text ...63m (max) (@VGS = -1.8 V) Ron = 230m (max) (@VGS = -2.5 V) Ron = 158m (max) (@VGS = -4.0 V) 2.00.1 0.650.05 2.10.1 1.70.1 +0.1 0.3 -0.05 3 ...rl VDD -2.5 V 90% OUT (b) VIN 0V 10% -2.5V 10 s (c) VOUT VDS (ON) 90% 10% tr t...
Description Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications

File Size 137.55K  /  5 Page

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For 230m rl Found Datasheets File :: 7    Search Time::1.546ms    
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