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SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
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| Part No. |
STW12NA60 STH12NA60_FI 3561 STH12NA60 STH12NA60FI
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| OCR Text |
...< 0.6
ID 12 A 7A 12 A
TO-247
TYPICAL RDS(on) = 0.44 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE...isowatt218
1
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value ST... |
| Description |
From old datasheet system
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin
N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET)
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| File Size |
241.66K /
11 Page |
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ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
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| Part No. |
STW5NA100 5367 STH5NA100FI STH5NA100
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| OCR Text |
...CED THRESHOLD VOLTAGE SPREAD TO-247
3 2 1
3 2 1
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s...isowatt218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value STW5NA1... |
| Description |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTORS
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
From old datasheet system
N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式快速功率MOS晶体 N沟道增强模式功率MOS晶体管（不适用沟道增强模式快速功率马鞍山晶体管）
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| File Size |
98.06K /
6 Page |
View
it Online |
Download Datasheet |
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