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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
ISL9V2540S3ST ISL9V2540S3S
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| OCR Text |
250mj, 400V Features
! SCIS Energy = 250mj at TJ = 25 C ! Logic Level Gate Drive
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General Description
The ISL9V2540S3S is a next generation ignition IGBT that offers outstanding SCIS capability in the industry standard D-Pak (TO-263)... |
| Description |
EcoSPARK N-Channel Ignition IGBT
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| File Size |
150.61K /
9 Page |
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TT electronics Semelab, Ltd.
International Rectifier, Corp.
Seme LAB
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| Part No. |
IRFN140SMD
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| OCR Text |
... 100C) 22A 13.9A 88A 75W 0.6W/C 250mj 5.5V/ns -55 to 150C 300C 1.67C/W 4C/W
Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) @ VDD = 25V , L 0.8mH , RG = 25W , Peak IL = 22A , Starting TJ = 25C 3) @ ISD 22A , di/dt 170A/ms , VDD BVD... |
| Description |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）3.9A，的Rds（on）：0.077Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本100V的，身份证（续）3.9A时，RDS（对）：0.077Ω））
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| File Size |
22.23K /
2 Page |
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SEMELAB LTD
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| Part No. |
IRF140-JQR-B
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| OCR Text |
...c. 20v 28a 20a 112a 125w 1.0w/c 250mj 28a 12.5mj 5.5v/ns -55 to +150c 300c mechanical data dimensions in mm (inches) n?channel power mosfet absolute maximum ratings (t case = 25c unless otherwise stated) features hermetically sealed to?3... |
| Description |
28 A, 100 V, 0.089 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
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| File Size |
16.58K /
2 Page |
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it Online |
Download Datasheet |
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