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				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	M470L3324DU0-LB0 M470L2923DV0-LB0 M470L2923DV0-LB3 M470L3324DU0 M470L3324DU0-LA2 M470L6524DU0-LA2 M470L6524DU0-CA2 M470L2923DV0-CA2 M470L3324DU0-CA2 M470L3324DU0-LCC M470L6524DU0-LCC M470L6524DU0-CCC M470L3324DU0-LB3 M470L6524DU0-LB0 M470L3324DU0-CCC M470L2923DV0-CCC M470L2923DV0-LCC M470L2923DV0-CB3 M470L2923DV0-CB0 M470L2923DV0-LA2 M470L6524DU0-CB0
OCR Text	256mb, 512mb, 1gb unbuffered sodimm rev. 0.1 june 2005 preliminary information in this document is provided in relation to samsung products, and is subject to change without notice. nothing in this document shall be construed as granting...
Description	DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模8 4针缓冲模块的512MBD为基础的模6 TSOP-II DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模18 4针缓冲模块的512MB的D为基础的模6 TSOP-II DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
File Size	276.27K / 20 Page	View it Online	Download Datasheet

				MICRON[Micron Technology]
Part No.	MT48H16M16LFFG MT48V16M16LFFG
OCR Text	256mb: x16 MOBILE SDRAM MOBILE SDRAM FEATURES * Temperature Compensated Self Refresh (TCSR) * Fully synchronous; all signals registered on positive edge of system clock * Internal pipelined operation; column address can be changed ever...
Description	MOBILE SDRAM
File Size	1,370.88K / 58 Page	View it Online	Download Datasheet

				MICRON[Micron Technology]
Part No.	MT48LC16M16A2 MT48LC32M8A2 MT48LC64M4A2 MT48LC32M8A2TG-75IT
OCR Text	256mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM FEATURES * PC66-, PC100-, and PC133-compliant * Fully synchronous; all signals registered on positive edge of system clock * Internal pipelined operation; column address can be changed every cl...
Description	SYNCHRONOUS DRAM
File Size	1,487.75K / 62 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 K4S560432E-NC K4S560432E-NCL75 K4S561632E-NC75
OCR Text	256mb E-die (x4, x8, x16) CMOS SDRAM 256mb E-die SDRAM Specification 54pin sTSOP-II Revision 1.0 August. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 August, 2003 ...
Description	16M x 16 SDRAM, LVTTL, 133MHz 256mb E-die SDRAM Specification 54pin sTSOP-II
File Size	205.22K / 14 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60 K4S561632E-TL75 K4S560432E-TL75 K4S560432E-TC75 K4S560432E-TC
OCR Text	256mb E-die (x4, x8, x16) CMOS SDRAM 256mb E-die SDRAM Specification Revision 1.3 September. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 September. 2003 SDRAM ...
Description	256mb E-die SDRAM Specification 54pin sTSOP-II
File Size	196.59K / 14 Page	View it Online	Download Datasheet


Part No.	MT8VDDT1664HDG-335XX
OCR Text	256mb, 512mb, 1gb (x64, dr): 200-pin ddr sodimm features pdf: 09005aef80765fab/source: 09005aef806e1d28 micron technology, inc., reserves the right to change products or specifications without notice. dd8c16_32_64_128x64hd.fm - rev. d 11/07...
Description	16M X 64 DDR DRAM MODULE, 0.75 ns, ZMA200
File Size	490.71K / 14 Page	View it Online	Download Datasheet


Part No.	MT48LC16M32L2F5-10
OCR Text	...t addendum changes the standard 256mb sdram mobile x32 data sheets should be referenced for a complete description of sdram functionality and operating modes. this addendum data sheet will concentrate on the key dif- ferences required to...
Description	16M X 32 SYNCHRONOUS DRAM, PBGA90
File Size	248.66K / 10 Page	View it Online	Download Datasheet

				VML[Vanguard International Semiconductor]
Part No.	VG37648041AT
OCR Text	256mb DDR SDRAM is a high-speed COMS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. The 256mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation. The d...
Description	256M:x4, x8, x16 CMOS Synchronous Dynamic RAM
File Size	963.00K / 86 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4C560838C-TCD3 K4C561638C-TCD3 K4C561638C-TCD4000 K4C561638C-TCDA K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD4
OCR Text	256mb Network-DRAM 256mb Network-DRAM Specification Version 0.7 -1- REV. 0.7 Aug. 2003 K4C5608/1638C Revision History Version 0.0 (Oct. / 5 / 2001) - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed t...
Description	256mb Network-DRAM
File Size	877.29K / 42 Page	View it Online	Download Datasheet


Part No.	MT16VR12816AG-745B1
OCR Text	...(128mb/144mb), 128 meg x 16/18 (256mb/288mb) ? uses (4, 6, 8, or 16) 8 meg x 16/18 direct rdram ? devices ? high-speed 356 mhz and 400 mhz clocks with 2x data rates ? 1.6 gb/s peak i/o bandwidth ? rambus ? signaling level (rsl) using diffe...
Description	128M X 16 RAMBUS MODULE, 45 ns, DMA84
File Size	181.72K / 8 Page	View it Online	Download Datasheet

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