|
|
 |

Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd. DiCon Fiberoptics, Inc.
|
Part No. |
K4D261638F-TC33 K4D261638F-TC25 K4D261638F-TC40 K4D261638F K4D261638F-TC50 K4D261638 K4D261638F-TC2A K4D261638F-TC36 K4D261638F-TC250 K4D261638F-LC250
|
OCR Text |
...ss key programs -. Read latency 3, 4 and 5(clock) -. Burst length (2, 4 and 8) -. Burst type (sequential & interleave) * All inputs except d...6GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequ... |
Description |
128Mbit GDDR sDRAM 128Mbit GDDR sDRAM内存 8M X 16 DDR DRAM, 0.55 ns, PDsO66 0.400 X 0.875 INCH, 0.65 MM PITCH, TsOP2-66 8M X 16 DDR DRAM, 0.55 ns, PDsO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TsOP2-66
|
File Size |
223.53K /
18 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Samsung Electronic SAMSUNG [Samsung semiconductor] SAMSUNG[Samsung semiconductor]
|
Part No. |
K4R881869 K4R881869M K4R881869M-NCK8 K4R881869M-NBCCG6 K4R881869M-NCK7
|
OCR Text |
...00 tRAC (Row Access Time) ns 53.3 45 45
Part Number
K4R881869M-NbCcG6 K4R881869M-NCK7 K4R881869M-NCK8
Features
Highest sustained bandwidth per DRAM device - 1.6GB/s sustained data transfer rate - separate control/data buses for ma... |
Description |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
|
File Size |
4,078.30K /
64 Page |
View
it Online |
Download Datasheet
|
|
|
 |
ALSC
|
Part No. |
sP1011 sP1011PB102002
|
OCR Text |
...att max, 2.5V core, 1.2V HT IO, 3.3V PCI IO * 352-pin sBGA package
Device Block Diagram
HT Interface
Tx PHY 8-bit HT port Rx PHY Tx FIF...6GB/sec bandwidth supports the needs of data transfer applications Host CPUs can be connected to bot... |
Description |
From old datasheet system HyperTransport Bridges
|
File Size |
20.38K /
2 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|