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  30a 400v Datasheet PDF File

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    CPV364M4K

IRF[International Rectifier]
Part No. CPV364M4K
OCR Text ... = 1 2 5 C TJ = 2 5 C I F = 30a I F = 30a 60 I IR R M - (A ) t rr - (ns) 10 IF = 15 A I F = 15A 40 I F = 5 .0A I F = 5.0A 20 100 di f/dt - (A/s) 1000 1 100 1000 di f /dt - (A / s) Fig. 14 - Typ...
Description IGBT SIP MODULE

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    HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723

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FAIRCHILD[Fairchild Semiconductor]
INTERSIL[Intersil Corporation]
Fairchild Semiconductor Corporation
Part No. HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723
OCR Text ... . .tSC 600 600 40 20 160 20 30 30a at 600V 165 1.32 -40 to 150 300 260 4 10 UNITS V V A A A V V W W/oC oC oC oC s s CAUTION: Stre...400v VCE = 200V 120 TC = 25oC 0 0 20 40 60 80 100 Ig(REF) = 1.685mA RL = 30 12 3000 9 20...
Description 40A/ 600V/ UFS Series N-Channel IGBTs
40A, 600V, UFS Series N-Channel IGBTs
From old datasheet system
XC9536-6VQ44C - NOT RECOMMENDED for NEW DESIGN
40 A, 600 V, N-CHANNEL IGBT

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    HGTG20N60B3D G20N60B3 G20N60B3D

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. HGTG20N60B3D G20N60B3 G20N60B3D
OCR Text ... tSC 600 600 40 20 20 160 20 30 30a at 600V 165 1.32 -40 to 150 260 4 10 W W/oC oC oC UNITS V V A A A A V V s s CAUTION: Stresses ...400v VCE = 200V 120 TC = 25oC Ig(REF) = 1.685mA RL = 30 0 20 40 60 QG , GATE CHARGE (nC) 80 12 ...
Description 40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
3.3V 36-mc CPLD

File Size 176.68K  /  7 Page

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    SGP20N60HS SGW20N60HS

INFINEON[Infineon Technologies AG]
Part No. SGP20N60HS SGW20N60HS
OCR Text ...OLLECTOR CURRENT 60A 50A 40A 30a 20A 10A 0A 10Hz TC=110C IC, COLLECTOR CURRENT 15s 10A 50s 200s 1A 1ms Ic Ic DC 0,1A 1V 1...400v, VGE = 0/+15V, RG = 16) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0,...
Description High Speed IGBT in NPT-technology

File Size 429.45K  /  12 Page

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    SKW20N60 Q67040-S4242

INFINEON[Infineon Technologies AG]
Part No. SKW20N60 Q67040-S4242
OCR Text ... CURRENT 80A 70A 60A 50A 40A 30a 20A 10A 0A 10Hz TC=110C TC=80C 10A 50s 200s 1A 1ms Ic 0.1A 1V 10V 100V DC 100Hz 1kHz ...400v, VGE = 0/+15V, RG = 16) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0,...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 272.85K  /  14 Page

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    APT5010JVRU2

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5010JVRU2
OCR Text ...teristic / Test Conditions IF = 30a VF Maximum Forward Voltage IF = 60A IF = 30a, TJ = 150C 050-5558 Rev A MIN TYP MAX UNIT 1.8 1.5 1.6 250 500 40 A pF Volts IRM CT Maximum Reverse Leakage Current VR = VR Rated VR ...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 110.72K  /  7 Page

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    APT5010JVRU3

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5010JVRU3
OCR Text ...teristic / Test Conditions IF = 30a VF Maximum Forward Voltage IF = 60A IF = 30a, TJ = 150C 050-5559 Rev A MIN TYP MAX UNIT 1.8 1.5 1.6 250 500 40 A pF Volts IRM CT Maximum Reverse Leakage Current VR = VR Rated VR ...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 111.65K  /  7 Page

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    APT5017BVFR

ADPOW[Advanced Power Technology]
Part No. APT5017BVFR
OCR Text 30a 0.170 POWER MOS V (R) FREDFET TO-247 Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFE...400v 8 10 5 4 50 100 150 200 250 300 350 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES...
Description POWER MOS V 500V 30a 0.170 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 62.45K  /  4 Page

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    APT5017BVR

ADPOW[Advanced Power Technology]
Part No. APT5017BVR
OCR Text 30a 0.170 POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technolo...400v 8 10 5 4 50 100 150 200 250 300 350 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES...
Description POWER MOS V 500V 30a 0.170 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.07K  /  4 Page

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