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  6gb s Datasheet PDF File

For 6gb s Found Datasheets File :: 75    Search Time::1.078ms    
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    VITESSE[Vitesse Semiconductor Corporation]
Part No. VsC3140
OCR Text 6gb/s 144x144 Asynchronous Crosspoint switch Physical Layer Products VsC3140 Product Brief Features: * Per Channel Programmable Input Equalization * Per Channel Programmable Output Drive Levels * On Board PRBs Generator/ Detector...
Description 3.6gb/s 144x144 Asynchronous Crosspoint switch

File Size 165.12K  /  2 Page

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    Vitesse Semiconductor Corporation.
Part No. VsC3140
OCR Text 6gb/s 144x144 asynchronous crosspoint switch physical layer products vsc3140 general description the vsc3140 is a 144x144 asynchro- nous crosspoint switch, designed to carry broadband data streams. the fully non-blocking switch core is pro-...
Description 3.6gb/s 144x144 Asynchronous Crosspoint switch

File Size 165.78K  /  2 Page

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    10112626-101LF 10112627-101LF 10112628-101LF 10112632-101LF 10112633-101LF 10112634-101LF 10117947 10117949 10117950

FCI connector
Part No. 10112626-101LF 10112627-101LF 10112628-101LF 10112632-101LF 10112633-101LF 10112634-101LF 10117947 10117949 10117950
OCR Text ... - 4x confguration C sas 2.1 ( 6gb/s ) compatible 8 pairs 10117771 mini-sas hd to mini-sas passive external cable assembly - sas 2.1 ( 6gb/s ) compatible - 4x confguration on mini-sas hd end and universal keying on mini-sas end 8 pairs ...
Description Mini-sAs HD Next generation sAs storage interface

File Size 822.94K  /  3 Page

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    NEC, Corp.
Part No. 128MD-40-800
OCR Text ... bandwidth per dram device - 1.6gb/s sustained data transfer rate - separate control and data buses for maximized efficiency - separate row and column control buses for easy scheduling and highest performance - 32 banks: four transaction...
Description 8M X 16 DIRECT RAMBUs DRAM, 40 ns, PBGA62 CENTER BONDED, BGA-62

File Size 2,646.94K  /  66 Page

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    Samsung Electronic
SAMSUNG [Samsung semiconductor]
SAMSUNG[Samsung semiconductor]
Part No. K4R881869 K4R881869M K4R881869M-NCK8 K4R881869M-NBCCG6 K4R881869M-NCK7
OCR Text ...d bandwidth per DRAM device - 1.6gb/s sustained data transfer rate - separate control/data buses for maximum efficiency - separate row and column control buses for easy scheduling and highest performance - 32 banks: four transactions can ta...
Description 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM

File Size 4,078.30K  /  64 Page

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    K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R271669A-NBMCCG6 K4R44

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R271669A-NBMCCG6 K4R441869A-N_MCK8 K4R271669A-N_MCK7 K4R271669A-N_MCK8 K4R441869A K4R441869A-N_MCG6 K4R441869A-N_MCK7 K4R271669AM-CG6 K4R271669AN-CK8 K4R271669AM-CK7
OCR Text ...M)CK7 K4R441869A-N(M)CK8 - 1.6gb/s sustained data transfer rate - separate control and data buses for maximized efficiency - separate row and column control buses for easy scheduling and highest performance - 32 banks: four transactions ...
Description 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.

File Size 4,046.09K  /  64 Page

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    KM418RD16AC KM418RD16AD KM418RD16C KM418RD16D

Samsung semiconductor
Part No. KM418RD16AC KM418RD16AD KM418RD16C KM418RD16D
OCR Text ...-RK70 KM418RD8AC(D)-RK80 - 1.6gb/s sustained data transfer rate - separate control and data buses for maximized efficiency - separate row and column control buses for easy scheduling and highest performance - 32 banks: four transactions ...
Description 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

File Size 2,631.46K  /  64 Page

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    KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD32AD KM418RD32C KM418RD32D KM418RD4AC KM418RD4AD KM418RD4C KM418RD4D K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD32AD KM418RD32C KM418RD32D KM418RD4AC KM418RD4AD KM418RD4C KM418RD4D KM418RD8ACD-RK70 KM418RD8ACD-RK80 KM418RD8AD KM418RD8C KM418RD32AC KM418RD8AC KM418RD8ACD-RG60 KM418RD8D KM418RD2D KM416RD8D KM416RD16AC KM416RD16AD KM416RD16C KM416RD16D KM416RD2AC KM416RD2AD KM416RD2C KM416RD2D KM416RD32AC KM416RD32AD KM416RD32C KM416RD32D KM416RD4AC KM416RD4AD KM416RD4C KM416RD4D KM416RD8AC_D-RK70 KM416RD8AC_D-RK80 KM416RD8AC_DB-RCG60 KM416RD8AD KM416RD8C KM416RD8ACD-RK80 KM416RD8ACDB-RCG60 KM416RD8ACD-RK70 KM416RD8AC-RK70 KM416RD8AD-RK70 KM418RD8AC-RK70 KM418RD8AD-RK70 KM418RD8AC-RK80 KM418RD16AD
OCR Text ...-RK70 KM418RD8AC(D)-RK80 - 1.6gb/s sustained data transfer rate - separate control and data buses for maximized efficiency - separate row and column control buses for easy scheduling and highest performance - 32 banks: four transactions ...
Description 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).

File Size 4,041.48K  /  64 Page

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    http://
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4R271669B-NMCG6 K4R441869B-NMCG6 K4R441869B-NMCK7 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R441869B-NCK7 K4R441869B-NCK8
OCR Text ... bandwidth per dram device - 1.6gb/s sustained data transfer rate - separate control and data buses for maximized efficiency - separate row and column control buses for easy scheduling and highest performance - 32 banks: four transaction...
Description 256K x 16/18 bit x 32s banks Direct RDRAMTM

File Size 309.32K  /  20 Page

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