7.6.310.9.43 pdf Datasheet P1 Full Text Search --- IC-ON-LINE


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7.6.310.9.43 Datasheet PDF File

For 7.6.310.9.43 Found Datasheets File :: 3924 Search Time::2.765ms
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				NEC Corp. NEC[NEC]
Part No.	2SC5005 2SC5005-T1 2SC5005NE58119
OCR Text	... = 5 mA, f = 1 GHz) Low Cre : 0.7 pF TYP. (@ VCB = 5 V, IE = 0, f = 1 MHz) Ultra Super Mini Mold Package. (1.6 mm x 0.8 mm) 0.5 3 1 ORDERING INFORMATION 0.6 PART NUMBER 2SC5005 2SC5005 - T1 QUANTITY 50 pcs./unit 3 kpcs./R...
Description	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD Discrete
File Size	53.49K / 8 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp. NEC, Corp.
Part No.	2SC5006 2SC5006-T1 2SC5006NE85619 2SC5006-T1-T2
OCR Text	...4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) : 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) 2 1.6 0.1 0.8 0.1 PACKAGE DIMENSIONS in millimeters * High \|S21e\|2 : 9 dB TYP. (@ VC...
Description	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD NPN硅外延晶体管3引脚超超级迷你模 NPN epitaxial-type silicon transistor
File Size	60.49K / 10 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5009 2SC5009-T1 2SC5009-T1-T2
OCR Text	...ICBO IEBO hFE fT Cre \|S21e\|2 NF 7.0 75 12.0 0.3 8.5 2.5 4.0 0.5 MIN. TYP. MAX. 0.1 0.1 150 GHz pF dB dB UNIT TEST CONDITIONS VCB = 5 V, IE =...6 200 A A A A A A A A A A 8 hFE - DC Current Gain 100 50 20 10 0 1 2 5 ...
Description	NPN epitaxial-type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
File Size	57.57K / 10 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SC5012 2SC5012-T1 2SC5012-T2
OCR Text	... mA,f = 1.0 GHz VCE = 8 V, IC = 7 mA,f = 1.0 GHz A A 1 Pulse Measurement; PW 350 s, Duty Cycle 2 % Pulsed. 2 Measured with 3 termi...6 10 VCE - Collector to Emitter Voltage - V 12 1 10 IC - Collector Current - mA 100 G...
Description	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	49.43K / 7 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB
OCR Text	...ICBO IEBO hFE fT Cre \|S21e\|2 NF 7.5 50 100 10 0.25 9.5 1.8 3.0 0.8 MIN. TYP. MAX. 1.0 1.0 250 GHz pF dB dB UNIT TEST CONDITION VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 6 V, IC = 10 mA1 VCE = 6 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz...
Description	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	51.33K / 8 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text	...3.716 11.834 10.355 9.190 8.182 7.376 6.751 6.171 5.658 5.286 4.932 4.630 4.347 4.128 3.914 3.734 3.561 3.386 3.242 3.117 2.986 2.891 2.790 2.703 2.610 2.525 2.435 S21 ANG 159.4 142.1 129.2 119.6 111.2 105.6 100.2 95.6 91.9 87.9 84.9 81.7 7...
Description	Discrete HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	49.94K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7807D2
OCR Text	...Max. 30 12 8.3 6.6 66 2.5 1.6 3.7 2.3 -55 to 150 C W A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 7 3 6 4 5 SO-8 Top View Device Features (Max Values) IRF7807D2 VDS RDS(on) Qg QSW Qoss 30V 25m 14n...
Description	MOSFET / SCHOTTKY DIODE
File Size	131.40K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7811AV IRF7811AVTR
OCR Text	...plications S S S G 1 8 7 A A D D D D 2 Description This new device employs advanced HEXFET Power MOSFET technology to achi...6 4 5 SO-8 T o p V ie w DEVICE CHARACTERISTICS IRF7811AV RDS(on) QG Qsw Qoss 11m 17nC...
Description	Si, SMALL SIGNAL, FET, MS-012AA N-Channel Application-Specific MOSFETs
File Size	85.36K / 6 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840LCL IRF840LCS
OCR Text	..., See Fig. 10 Between lead, nH 7.5 --- and center of die contact 1100 --- VGS = 0V 170 --- pF VDS = 25V 18 --- = 1.0MHz, See Fig. 5 Sou...6. Typical Gate Charge Vs. Gate-to-Source Voltage 4 Fig 7. Typical Source-Drain Diode Forward ...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
File Size	169.91K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text	...ure, for 10 seconds Max. -6.7 -4.7 -27 3.7 43 0.29 20 140 -6.7 4.3 -4.5 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mount...
Description	Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 6.7A Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A) HEXFET? Power MOSFET -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	357.87K / 10 Page	View it Online	Download Datasheet

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