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				SEME-LAB[Seme LAB]
Part No.	2N6295
OCR Text	...0mA IB = 40mA VCE = 3V Min. 80 0.5 Typ. Max. Unit V mA 0.5 5.0 2.0 mA mA ON CHARACTERISTICS hFE VCE(sat) VBE(sat) VBE(on) DC Current Gain Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Base - Emitter ...
Description	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR
File Size	14.63K / 2 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SC5005 2SC5005-T1 2SC5005NE58119
OCR Text	...Collector Current - mA 10 80 m A 60 m A 40 m A 20 m A 0 2 4 6 8 10 1 2 5 10 20 50 VCE - Colle...64.8 57.0 49.5 42.5 35.7 29.1 22.7 16.6 10.3 4.2 -1.5 -7.3 -13.2 -18.7 -24.4 -30.0 -35.4 -40.8 -46.3...
Description	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD Discrete
File Size	53.49K / 8 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5009 2SC5009-T1 2SC5009-T1-T2
OCR Text	... IB = 200 180 160 140 120 100 80 60 40 20 2 4 6 200 A A A A A A A A A A 8 hFE - DC Current Gain 100 50 20 10 0 1 ...64.5 62.0 59.3 56.8 54.2 52.0 49.5 47.1 44.7 42.6 S22 ANG 86.5 77.4 74.4 70.2 67.4 65.1 63.0 61....
Description	NPN epitaxial-type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
File Size	57.57K / 10 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2
OCR Text	...ing hFE EB R26 50 to 100 FB R27 80 to 160 GB R28 125 to 250 2 2SC5011 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs...64.4 61.7 58.9 56.3 53.7 51.9 49.5 46.9 45.1 42.5 40.8 39.3 36.3 34.3 32.2 29.2 28.0 25.3 S22 ANG...
Description	NPN epitaxial-type silicon transistor HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	50.99K / 8 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SC5012 2SC5012-T1 2SC5012-T2
OCR Text	...ing hFE EB R36 50 to 100 FB R37 80 to 160 GB R38 125 to 250 2 2SC5012 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs...64.0 -67.8 -67.7 -69.6 -74.7 -75.0 -78.0 -82.7 -82.1 -86.4 5 2SC5012 S-PARAMETER VCE = 3 V, ...
Description	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	49.43K / 7 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB
OCR Text	...ing hFE EB R46 50 to 100 FB R47 80 to 160 GB R48 125 to 250 2 2SC5013 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs...64.7 62.0 60.0 57.1 55.4 52.3 50.8 48.4 45.8 43.9 42.4 39.4 37.9 34.6 S22 ANG 86.3 69.9 57.4 58....
Description	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	51.33K / 8 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SC5014 2SC5014-T1 2SC5014-T2
OCR Text	...A 180 A 160 A 140 A 120 A 100 A 80 A 60 A 40 A 20 A 5 VCE - Collector to Emitter Voltage - V GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10...64.8 62.1 59.8 58.7 55.5 54.0 51.4 S22 ANG 88.8 84.1 72.2 73.5 68.9 63.7 64.9 60.0 60.3 58.1 56....
Description	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	48.18K / 8 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text	... A 160 A 140 A 120 A 100 A 80 A 60 A 40 A 20 A 2 4 6 8 500 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 3 V hFE - DC Current Gain...64.0 61.1 59.3 56.7 54.9 53.0 50.2 48.6 47.4 44.0 42.6 40.5 MAG .011 .029 .041 .046 .051 .060 .066 ....
Description	Discrete HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	49.94K / 8 Page	View it Online	Download Datasheet

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