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Renesas Electronics Corporation. Renesas Electronics, Corp.
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Part No. |
M38030F2L-XXXHP M38030F2L-XXXKP M38030F2L-XXXSP M38030F2L-XXXWG M38030MAL-XXXWG M38030MAL-XXXKP M38030FAL-XXXSP M38031FAL-XXXHP M38030FAL-XXXWG M38030MAL-XXXHP M38030FAL-XXXKP M38031FAL-XXXKP M38030FAL-XXXHP M38031FAL-XXXSP M38031FAL-XXXWG M38030MAL-XXXSP M38030F3L-XXXHP M38030F3L-XXXWG M38030M3L-XXXKP M38030F3L-XXXSP M38030F3L-XXXKP M38030M3L-XXXHP M38030FBL-XXXWG M38030MBL-XXXHP M38030FBL-XXXHP M38030FBL-XXXSP M38030MBL-XXXKP M38030M2L-XXXHP M38030M2L-XXXKP M38030M2L-XXXSP M38030M2L-XXXWG M38031F2L-XXXHP M38031F2L-XXXKP M38031F2L-XXXSP M38031F2L-XXXWG M38030FB-XXXHP M38031FBL-XXXSP M38035MBL-XXXSP M38038FBL-XXXSP M38039FBL-XXXSP M38030MBL-XXXSP M38036MBL-XXXSP M38037FBL-XXXSP M38037MBL-XXXSP M38036FBL-XXXSP M38038MBL-XXXSP M38031FC-XXXHP M38031FC-XXXKP M38031FC-XXXWG M38031FCL-XXXHP M38031FCL-XXXKP M38031FCL-XXXSP M38031FCL-XXXWG M38031F5-XXXKP M38031F5-XXXSP M38031F5-XXXWG M38031F5L-XXXHP M38031F5L-XXXKP M38031F5L-XXXSP M38031F5L-XXXWG M38030F1-XXXHP M38030F1-XXXKP M38030F1-XXXSP M38030F1-XXXWG M38030F1L-XXXHP M38030F1L-XXXKP M38030F1L-XXXSP M38030F1L-XXXWG M38031F1-XXXKP M38031F1-XXXWG M38031F1L-XXXHP M38031F1L-XXXKP M38031F6-XXXHP M38031F6-XXXKP M38031F6-XXXSP M38031F6-XXXWG M
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Description |
256 Kbit (32K x 8) nvSRAM; Organization: 32Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 256 Kb; Package: SOIC 3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C 256K (32K x 8) Static RAM; Density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.50 to 5.50 V; Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 1 MHz to 200 MHz; Outputs: 6 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 256; Vcc (V): 3.3; fMax (MHz): 66; tPD (ns): 12 8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; 9-Mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V 18-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V Four Output PCI-X and General Purpose Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 140 MHz; Outputs: 4; Operating Range: 0 to 70 C 18-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 2.4 to 2.6 V 4-Mbit (512K x 8) Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.50 to 5.50 V; 4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 2.20 to 3.60 V; 64K x 16 Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V; 1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 4.5 to 5.5 V; 9-Mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V 1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V; 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 16-Mbit (1M x 16 / 2M x 8) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 4.50 to 5.50 V; 4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, BUSY; Density: 128 Kb; Organization: 8Kb x 16; Vcc (V): 4.5 to 5.5 V; Speed: 35 ns 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 2.4 to 2.6 V 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V 8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 4.50 to 5.50 V; 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V 256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 4.5 to 5.5 V; 9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V 4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V; 8-Mbit (1024K x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V; 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V 256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V; 8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V; 3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: -40 to 85 C Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 512K x 8 Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.5 to 5.5 V; 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 2.4 to 2.6 V 2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C 3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C 2M x 8 Static RAM; Density: 16 Mb; Organization: 2Mb x 8; Vcc (V): 3.0 to 3.6 V; 16 Mbit (512K X 32) Static RAM; Density: 16 Mb; Organization: 512Kb x 32; Vcc (V): 3.0 to 3.6 V; 3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: 0 to 70 C 8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 3.0 to 3.6 V; 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6 2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V; 16-Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V; 4-Mbit (256K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V 512K (32K x 16) Static RAM; Density: 512 Kb; Organization: 32Kb x 16; Vcc (V): 3.0 to 3.6 V; 4-Mbit (128K x 36) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V 1M x 16 Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V; Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C 3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C MoBL(R) 2 Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V; Rambus(R) XDR(TM) Clock Generator; VDD: 2.5 V; Input Frequency: 100 MHz to 133 MHz; Output Frequency: 300 MHz to 800 MHz; # Out: 4 2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V; 4-Mbit (128K x 36) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 167; tPD (ns): 7 2.5V or 3.3V, 200-MHz, 1:10 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 10; Operating Range: 0 to 70 C 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 100; tPD (ns): 7 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 7 18-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 25 MHz to 100 MHz; Output Frequency Range: 25 MHz to 100 MHz; Operating Range: 0 to 70 C; Package: SOIC Low Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 143; tPD (ns): 9 单芯位CMOS微机 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 154; tPD (ns): 6 单芯位CMOS微机 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9 单芯位CMOS微机 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 3.3; fMax (MHz): 83; tPD (ns): 10 单芯位CMOS微机 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6 单芯位CMOS微机 Three-PLL General-Purpose EPROM Programmable Clock Generator; Voltage (V): 3.3/5.0 V; Input Range: 1 MHz to 30 MHz; Output Range: .077 MHz to 100 MHz; Outputs: 6 单芯位CMOS微机 8-Mbit (512K x 16) MoBL(R) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机 High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C 单芯位CMOS微机 3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 100 MHz; Outputs: 10; Operating Range: 0 to 70 C 单芯位CMOS微机 3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: -40 to 85 C 单芯位CMOS微机 Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机 2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V; 单芯位CMOS微机 MoBL(R) 1 Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机 18-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 1-Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 4.50 to 5.50 V; 单芯位CMOS微机 4-Mbit (256K x 18) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机 2-Mbit (64K x 32) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 2 Mb; Organization: 64Kb x 32; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机 200-MHz Field Programmable Zero Delay Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 10 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C 单芯位CMOS微机 2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机 2-Mbit (256K x 8) Static RAM; Density: 2 Mb; Organization: 256Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯8位CMOS微机 Very Low Jitter Field and Factory Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 10 MHz to 133 MHz; Output Range: 20 MHz to 200 MHz; Outputs: 2 单芯位CMOS微机 3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C 单芯位CMOS微机 3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C 单芯位CMOS微机 Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 0 MHz to 200 MHz; Outputs: 3 单芯位CMOS微机 1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机 Quad PLL Clock Generator with 2-Wire Serial Interface; Voltage (V): 2.5/3.3 V; Input Range: 27 MHz to 27 MHz; Output Range: 4.2 MHz to 166 MHz; Outputs: 5 单芯位CMOS微机 2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C 单芯位CMOS微机 3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C 单芯位CMOS微机 High Speed Multi-phase PLL Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 24 MHz to 200 MHz; Outputs: 11; Operating Range: 0 to 70 C 单芯位CMOS微机 2.5V or 3.3V, 200-MHz, 1:18 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 18; Operating Range: -40 to 85 C 单芯位CMOS微机 -bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 位AVR微控制器具有8K字节的系统内可编程闪 2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C 1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: 0 to 70 C Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 4 MHz to 32 MHz; Output Frequency Range: 4 MHz to 32 MHz; Operating Range: 0 to 70 C; Package: SOIC High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9
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File Size |
1,602.57K /
119 Page |
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Vishay Intertechnology, Inc.
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Part No. |
FP1/2P86R6F5555CH FP1/2P93R1F5555CH FP1/2P1K47F5555CH FP1/2P1K40F5555CH FP1/2P1K43F5555CH FP1/2P12K4F5555CH FP1/2P15K4F5555CH FP1/2P17K4F5555CH FP001P33R0G6206CH FP1/2P34R0F5555CH FP1/2P34R8F5555CH FP001P33R0J6206CH FP003P430RJ9303EK FP003P470KJ9303EK FP003P4K70J9303EK FP003P43R0J9303EK FP003P47R0J9303EK FP003P47K0J9303EK FP003P430KJ9303EK FP003P6K80J9303EK FP003P680KJ9303EK FP003P680RJ9303EK FP003P43K0J9303EK FP003P62R0J9303EK FP003P68R0J9303EK FP003P470RJ9303EK FP003P62K0J9303EK FP003P68K0J9303EK FP003P4K30J9303EK FP003P620KJ9303EK FP003P620RJ9303EK
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Description |
RESISTOR, METAL FILM, 0.5 W, 1 %, 86.6 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, METAL FILM, 0.5 W, 1 %, 93.1 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, METAL FILM, 0.5 W, 1 %, 1470 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, METAL FILM, 0.5 W, 1 %, 1400 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, METAL FILM, 0.5 W, 1 %, 1430 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, METAL FILM, 0.5 W, 1 %, 12400 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, METAL FILM, 0.5 W, 1 %, 15400 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, METAL FILM, 0.5 W, 1 %, 17400 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, METAL FILM, 1 W, 2 %, 33 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, METAL FILM, 0.5 W, 1 %, 34 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, METAL FILM, 0.5 W, 1 %, 34.8 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, METAL FILM, 1 W, 5 %, 33 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, METAL FILM, 3 W, 5 %, 430 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 3 W, 5 %, 470000 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 3 W, 5 %, 4700 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 3 W, 5 %, 43 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 3 W, 5 %, 47 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 3 W, 5 %, 47000 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 3 W, 5 %, 430000 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 3 W, 5 %, 6800 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 3 W, 5 %, 680000 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 3 W, 5 %, 680 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 3 W, 5 %, 43000 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 3 W, 5 %, 62 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 3 W, 5 %, 68 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 3 W, 5 %, 470 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 3 W, 5 %, 62000 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 3 W, 5 %, 68000 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 3 W, 5 %, 4300 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 3 W, 5 %, 620000 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 3 W, 5 %, 620 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
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File Size |
300.01K /
5 Page |
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Dielectric Laboratories, Inc.
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Part No. |
D20NP1R4F5PA D12NP0R4F5PA D12NP0R4B5PA D15NP1R2F5PX D12NP0R5B5PB D30NP2R4B5PA D12NP0R5F5PA D12NP0R6B5PB D20NP1R8F5PA D30NP2R4B1PX D12NP0R5F5PB D12NP0R8F5PX D12NP0R9B5PB D20NP1R4B5PB D20NP1R2F5PA D12NPR45F5PA D30NP2R4B5PB D20NP1R8F5PX D20NP1R4B5PA D30NP1R4B1PX D12NP0R8B5PX D12NP0R5F5PX D12NP0R5B5PX D20NP1R2F1PA D15NP1R1F5PA D30NP1R3C1PA D20NP1R2F1PX D20NP1R0B1PX D12NP0R4B5PX D12NP0R9F5PX D20NP1R1F5PA D12NP0R7B5PX D30NP1R3B1PB D15NP1R1F5PB D30NP1R3B1PA D30NP1R3C1PB D30NP2R4B1PA D20NP1R4B5PX D12NP0R8B5PB D20NP1R1F1PB D12NP0R6F5PB D15NP1R2F5PB D20NP1R2F1PB D12NP0R7B5PB D12NP0R6B5PA D12NPR35F5PB D20NP1R4F5PX D12NP0R6F5PA D30NP2R4B1PB D20NP1R1F5PB D20NP1R7F5PB D12NP0R4D5PB D12NP0R6F5PX D30NP1R3D1PA D12NP0R8B5PA D20NP1R0B1PA D20NP1R0B1PB D30NP1R3B1PX D15NP1R2F5PA D12NP0R4F5PX D20NP1R6F5PA D12NPR35F5PX D30NP1R4B1PA D20NP1R7F5PX D20NP1R8F5PB D12NP0R6B5PX D12NP0R4F5PB D12NP0R4D5PX D12NS2R0G5PA D12NP0R4D5PA D12NS2R0C5PA D15NP1R1F5PX D12NP0R5D5PA D12NP0R9B5PX D12NS2R0F5PX D12NS2R0J5PX D12NP0R9F5PB D30NP2R4B5PX D12NS2R0B5PB D12NS2R0F5PA D12NS2R0J5PB D30NP1R3C1PX D20NP1R6F5PX D12NS2R0B5PA D20NP1R4F5PB D12NP0R5B5PA D20NP1R1F1PA D12NP0R9B5PA D20NP1R6F5PB D12NS2R0F5PB D12NS2R0B5PX D12NS2R0G5PX D20N
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Description |
CAPACITOR, CERAMIC, 50 V, NP, 0.0000014 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 50 V, NP, 0.0000004 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 50 V, NP, 0.0000012 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 50 V, NP, 0.0000005 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 50 V, NP, 0.0000024 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 50 V, NP, 0.0000006 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 50 V, NP, 0.0000018 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 100 V, NP, 0.0000024 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 50 V, NP, 0.0000008 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 50 V, NP, 0.0000009 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 50 V, NP, 0.00000045 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 100 V, NP, 0.0000014 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 100 V, NP, 0.0000012 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 50 V, NP, 0.0000011 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 100 V, NP, 0.0000013 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 100 V, NP, 0.000001 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 50 V, NP, 0.0000007 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 100 V, NP, 0.0000011 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 50 V, NP, 0.00000035 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 50 V, NP, 0.0000017 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 50 V, NP, 0.0000016 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 50 V, NS, 0.000002 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 50 V, BJ, 0.000043 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 50 V, PG, 0.00000008 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 100 V, PG, 0.00000008 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 100 V, PG, 0.00000007 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 50 V, PG, 0.00000007 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 100 V, PI, 0.0000002 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 100 V, PI, 0.00000006 uF, SURFACE MOUNT CHIP CAPACITOR, CERAMIC, 50 V, PI, 0.00000006 uF, SURFACE MOUNT CHIP
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File Size |
930.06K /
8 Page |
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