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  byte 264 Datasheet PDF File

For byte 264 Found Datasheets File :: 365    Search Time::1.187ms    
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    K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text ... device(K9F5608X0C) : (512 + 16)byte - X16 device(K9F5616X0C) : (256 + 8)Word - Block Erase : - X8 device(K9F5608X0C) : (16K + 512)byte - X1...264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 de...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 679.73K  /  42 Page

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    K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text ... location is changed from 256th byte to 256th and 261th byte. 2. tAR1, tAR2 are merged to tAR.(page 12) (before revision) min. tAR1 = 20ns ,...264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 de...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 601.33K  /  34 Page

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    K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U0C-D K9F5608U0C-DCB0 K9F5608U0C-DIB0 K9F5608U0C-F K9F5608U0C-FCB0 K9F5608U0C-FIB0 K9F5608U0C-H K9F5608U0C-HCB0 K9F5608U0C-HIB0 K9F5608U0C-P K9F5608U0C-PCB0 K9F5608U0C-PIB0 K9F5608U0C-V K9F5608U0C-VCB0 K9F5608U0C-VIB0 K9F5608U0C-Y K9F5608U0C-YCB0 K9F5608U0C-YIB0 K9F1208Q0A K9F5616U0C K9F5616U0C-D K9F5616U0C-DCB0 K9F5616U0C-DIB0 K9F5616U0C-H K9F5616U0C-HCB0 K9F5616U0C-HIB0 K9F5616U0C-P K9F5616U0C-PCB0 K9F5616U0C-PIB0 K9F5616U0C-Y K9F5616U0C-YCB0 K9F5616U0C-YIB0 K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-H K9F5616Q0C-HCB0 K9F5616Q0C-HIB0 K9F1208Q0A-XXB0 K9F5608D0C-H K9F5608D0C-D K9F5608D0C-Y K9F5608D0C-P K9F5608U0M
OCR Text ... device(K9F5608X0C) : (512 + 16)byte - X16 device(K9F5616X0C) : (256 + 8)Word - Block Erase : - X8 device(K9F5608X0C) : (16K + 512)byte - X1...264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 de...
Description 32M x 8 Bit NAND Flash Memory
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata

File Size 653.97K  /  39 Page

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    K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0

Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
Part No. K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0
OCR Text ...s) status is defined by the 6th byte in the spare area. Samsung makes sure that either the 1st or 2nd page of every invalid block has 00h da...264 Mbits 8 bit 16 byte 512byte Page Register 512 byte I/O 0 1st Cycle 2nd Cycle 3rd Cycle A0...
Description From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory

File Size 350.10K  /  26 Page

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    K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0

Samsung Electronic
Samsung semiconductor
Part No. K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0
OCR Text ...rase - Page Program : (512 + 16)byte - Block Erase : (16K + 512)byte * 528-byte Page Read Operation - Random Access : 10s(Max.) - Serial Pag...264 Mbits 8 bit 16 byte 512byte Page Register 512 byte I/O 0 1st Cycle 2nd Cycle 3rd Cycle A0...
Description 32M x 8 Bit NAND Flash Memory

File Size 607.24K  /  29 Page

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    UPD98405 UPD98405GL-PMU

NEC[NEC]
Part No. UPD98405 UPD98405GL-PMU
OCR Text ... Power Supply for Analog Part : byte Enable : Control Memory Address : Local Port byte Enable : Control Memory Data : Clock : Control Memory...264 PHRST_B 265 PHOE_B 266 PHYALM/ PHR/W_B Remark Open the pins to which no function is allocated...
Description 155M ATM INTEGRATED SAR CONTROLLER

File Size 323.42K  /  64 Page

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    AT45DB021B AT45DB021B-CC AT45DB021B-CI AT45DB021B-RC AT45DB021B-RI AT45DB021B-SC AT45DB021B-SI AT45DB021B-TC AT45DB021B-

ATMEL[ATMEL Corporation]
Part No. AT45DB021B AT45DB021B-CC AT45DB021B-CI AT45DB021B-RC AT45DB021B-RI AT45DB021B-SC AT45DB021B-SI AT45DB021B-TC AT45DB021B-TI AT45DB021BNBSP
OCR Text ... Block Erase Operations Two 264-byte SRAM Data Buffers - Allows Receiving of Data while Reprogramming of Nonvolatile Memory Continuous Read Capability through Entire Array - Ideal for Code Shadowing Applications Low Power Dissipation - 4 mA...
Description From old datasheet system
2M bit, 2.7-Volt Only Serial-Interface Flash with Two 264-byte SRAM Buffers
2-megabit 2.7-volt Only DataFlash??

File Size 234.80K  /  33 Page

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    AT45DB021 AT45DB021-JC AT45DB021-JI AT45DB021-RC AT45DB021-RI AT45DB021-TC AT45DB021-TI

ATMEL[ATMEL Corporation]
Part No. AT45DB021 AT45DB021-JC AT45DB021-JI AT45DB021-RC AT45DB021-RI AT45DB021-TC AT45DB021-TI
OCR Text ...bytes/Page) Main Memory Two 264-byte SRAM Data Buffers - Allows Receiving of Data while Reprogramming of Non-Volatile Memory Internal Program and Control Timer Fast Page Program Time - 7 ms Typical 120 s Typical Page to Buffer Transfer Time...
Description 2-Megabit 2.7-volt Only Serial DataFlash

File Size 200.83K  /  18 Page

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    AT45DB041B AT45DB041B-CC AT45DB041B-CI AT45DB041B-RC AT45DB041B-RC-2.5 AT45DB041B-RI AT45DB041B-SC AT45DB041B-SC-2.5 AT4

ATMEL[ATMEL Corporation]
ETC
Part No. AT45DB041B AT45DB041B-CC AT45DB041B-CI AT45DB041B-RC AT45DB041B-RC-2.5 AT45DB041B-RI AT45DB041B-SC AT45DB041B-SC-2.5 AT45DB041B-SI AT45DB041B-TC AT45DB041B-TC-2.5 AT45DB041B-TI AT45DB041BNBSP 45DB0B41B 45DB041B
OCR Text ... Block Erase Operations Two 264-byte SRAM Data Buffers - Allows Receiving of Data while Reprogramming of Nonvolatile Memory Continuous Read Capability through Entire Array Low Power Dissipation - 4 mA Active Read Current Typical - 2 A CMOS ...
Description 4M bit, 2.7-Volt Only Serial-Interface Flash with Two 264-byte SRAM Buffers
4-megabit 2.5-volt Only or 2.7-volt Only DataFlash

File Size 217.67K  /  33 Page

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    AT45DB041 AT45DB041-CC AT45DB041-CI AT45DB041-JC AT45DB041-JI AT45DB041-RC AT45DB041-RI AT45DB041-TC AT45DB041-TI AT45DB

ATMEL[ATMEL Corporation]
Part No. AT45DB041 AT45DB041-CC AT45DB041-CI AT45DB041-JC AT45DB041-JI AT45DB041-RC AT45DB041-RI AT45DB041-TC AT45DB041-TI AT45DB
OCR Text ...bytes/Page) Main Memory Two 264-byte SRAM Data Buffers - Allows Receiving of Data While Reprogramming of Non-Volatile Memory Internal Program and Control Timer Fast Page Program Time - 7 ms Typical 120 s Typical Page to Buffer Transfer Time...
Description 4-Megabit 2.7-volt Only Serial DataFlash

File Size 208.77K  /  18 Page

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For byte 264 Found Datasheets File :: 365    Search Time::1.187ms    
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