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copackaged Datasheet PDF File

For copackaged Found Datasheets File :: 23 Search Time::1.547ms
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					IRF[International Rectifier]
Part No.	IRL3103D1
OCR Text	copackaged HEXFET(R) Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application D VDSS = 30V RDS(on) = 0.014 G ID = 64A S Description ...
Description	FETKY?/a> MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=64A) FETKY MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=64A) FETKY⑩ MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=64A)
File Size	90.89K / 6 Page	View it Online	Download Datasheet

					IRF[International Rectifier]
Part No.	IRL3103D2
OCR Text	copackaged HEXFET(R) Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application VDSS = 30V RDS(on) = 0.014 G ID = 54A S Description The ...
Description	FETKY?/a> MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=54A) FETKY MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=54A) FETKY⑩ MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=54A)
File Size	112.57K / 6 Page	View it Online	Download Datasheet

					International Rectifier
Part No.	IRL3103D2
OCR Text	copackaged hexfet power mosfets and schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. a low on resistance gen 5 mosfet with a low forward voltage drop schottky diode and mini...
Description	30V FETKY - MOSFET and Schottky Diode in a TO-220AB package
File Size	119.99K / 6 Page	View it Online	Download Datasheet

					International Rectifier
Part No.	IRL3103D1
OCR Text	copackaged hexfet power mosfets and schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. a low on resistance gen 5 mosfet with a low forward voltage drop schottky diode and mini...
Description	30V FETKY - MOSFET and Schottky Diode in a TO-220AB package
File Size	97.18K / 6 Page	View it Online	Download Datasheet

					International Rectifier
Part No.	IRL3103D2PBF
OCR Text	copackaged HEXFET(R) Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application Lead-Free FETKYTM MOSFET & SCHOTTKY RECTIFIER D VDSS = 30V RD...
Description	FETKY MOSFET & SCHOTTKY RECTIFIER
File Size	148.91K / 7 Page	View it Online	Download Datasheet

					ON Semiconductor
Part No.	MGW14N60ED
OCR Text	...te bipolar transistor (igbt) is copackaged with a soft recovery ultrafast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltageblocking capability. its new 600v igbt technology is specifically su...
Description	Insulated Gate Bipolar Transistor 18 A, 600 V, N-CHANNEL IGBT, TO-247AE
File Size	152.86K / 6 Page	View it Online	Download Datasheet

					ON Semiconductor
Part No.	MGW21N60ED-D
OCR Text	...te bipolar transistor (igbt) is copackaged with a soft recovery ultrafast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltageblocking capability. its new 600v igbt technology is specifically su...
Description	Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
File Size	127.43K / 6 Page	View it Online	Download Datasheet

					ON Semiconductor
Part No.	MGW14N60ED-D
OCR Text	...te bipolar transistor (igbt) is copackaged with a soft recovery ultrafast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltageblocking capability. its new 600v igbt technology is specifically su...
Description	Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
File Size	124.38K / 6 Page	View it Online	Download Datasheet

					ON Semiconductor
Part No.	MGP7N60ED-D
OCR Text	...te bipolar transistor (igbt) is copackaged with a soft recovery ultrafast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltageblocking capability. its new 600 v igbt technology is specifically s...
Description	Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
File Size	120.86K / 6 Page	View it Online	Download Datasheet

					ON Semiconductor
Part No.	MGP4N60ED-D
OCR Text	...te bipolar transistor (igbt) is copackaged with a soft recovery ultrafast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltageblocking capability. its new 600 v igbt technology is specifically s...
Description	Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
File Size	122.50K / 6 Page	View it Online	Download Datasheet

For copackaged Found Datasheets File :: 23 Search Time::1.547ms
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