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  efet Datasheet PDF File

For efet Found Datasheets File :: 74    Search Time::1.203ms    
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    TRIQUINT[TriQuint Semiconductor]
Part No. TQTRX
OCR Text ...to 26.1GHz) S12 / .05 S21 efet 300 um Vds=3V 50% Idmax -6 -4 -2 0 2 4 6 S11 S22 Freq (0.1GHz to 26.1GHz) S12 / .05 S21 TriQuint Semiconductor 2300 NE Brookwood Pkwy Hillsboro, Oregon 97124 Semiconductors for Communicat...
Description Advanced Passives & MESFET Foundry Service

File Size 172.25K  /  6 Page

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    MTP50N06V-D

ON Semiconductor
Part No. MTP50N06V-D
OCR Text ...hnology ? faster switching than efet predecessors ? avalanche energy specified ? i dss and v ds(on) specified at elevated temperature ? static parameters are the same for both tmos v and tmos efet maximum ratings (t c = 25 c unless ot...
Description Power MOSFET 42 Amps, 60 Volts N-Channel TO-220

File Size 63.48K  /  8 Page

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    TriQuint Semiconductor,Inc.
Part No. TQTRX
OCR Text ...6 -4 -2 0 2 4 6 s21 s11 s22 efet 300 um vds=3v 50% idmax freq (0.1ghz to 26.1ghz) s12 / .05 -4 -3 -2 -1 0 1 2 3 4 s21 s11 s22 dfet 300 um vds=3v 50% idss freq (0.1ghz to 26.1ghz) s12 / .05 -4 -3 -2 -1 0 1 2 3 4 ...
Description Advanced Passives & MESFET Foundry Service

File Size 166.57K  /  6 Page

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    Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
Part No. ARA2005 ARA2005S8P0 ARA2005S8P1
OCR Text ...T (+) A2IN (+) A2OUT (+) ISET2 efet ISET1 Vg1 A1IN (-) A1OUT (-) ATTIN (-) efet Vg2 A2OUT (-) A2IN (-) ATTOUT (-) 32 dB 16 dB 8 dB 4 dB Figure 2: Functional Block Diagram 1 2 3 4 5 6 7 8 9 10 11 12 13 14 GND V...
Description The ARA2005 is a monolithic GaAs device designed to provide the reverse path amplification and output level control functions in ...
Reverse Path Amplifiers
Reverse Amplifier with Step Attenuator

File Size 224.97K  /  16 Page

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    ARA2004S12P1 ARA2004RS12P1 ARA2004

ANADIGICS[ANADIGICS, Inc]
Part No. ARA2004S12P1 ARA2004RS12P1 ARA2004
OCR Text ...T (+) A2IN (+) A2OUT (+) ISET2 efet efet Vg2 A2OUT (-) A2IN (-) ATTOUT (-) 32 dB P5 16 dB P4 8 dB P3 4 dB P2 2 dB P1 1 dB P0 Buffer Clock Data 8-Bit Shift Register/ Address 8 Control Latch Enable ...
Description Reverse Amplifier with Step Attenuator

File Size 261.09K  /  20 Page

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    Anadigics Inc
Part No. ARA2001
OCR Text ...T (+) A2IN (+) A2OUT (+) ISET2 efet ISET1 Vg1 A1IN (-) A1OUT (-) ATTIN (-) efet Vg2 A2OUT (-) A2IN (-) ATTOUT (-) 32 dB P5 16 dB P4 8 dB P3 4 dB P2 2 dB P1 1 dB P0 Buffer Clock Data 8-Bit Shift Register...
Description The ARA2001 is designed to provide the reverse path amplification and output level control functions in a CATV Set-Top Box or Cable ...
From old datasheet system

File Size 255.74K  /  20 Page

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    ANADIGICS[ANADIGICS, Inc]
Part No. ARA2000S12P1 ARA2000
OCR Text ...T (+) A2IN (+) A2OUT (+) ISET2 efet ISET1 Vg1 A1IN (-) A1OUT (-) ATTIN (-) efet Vg2 A2OUT (-) A2IN (-) ATTOUT (-) 32 dB P5 16 dB P4 8 dB P3 4 dB P2 2 dB P1 1 dB P0 Buffer Clock Buffer 2 Data 2-Bit S...
Description Address-Programmable Reverse Amplifier with Step Attenuator

File Size 200.57K  /  20 Page

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    MTV32N25E-D

ON Semiconductor
Part No. MTV32N25E-D
OCR Text ...in addition, this advanced tmos efet is designed to withstand high energy in the avalanche and commuta- tion modes. the new energy efficient design also offers a drainto source d iod e w it h a f as t r ecover y t ime . d esigne d f o r l ...
Description TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate

File Size 267.28K  /  10 Page

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    Anadigics Inc
Part No. ARA2004
OCR Text ...T (+) A2IN (+) A2OUT (+) ISET2 efet ISET1 Vg1 A1IN (-) A1OUT (-) ATTIN (-) efet Vg2 A2OUT (-) A2IN (-) ATTOUT (-) 32 dB P5 16 dB P4 8 dB P3 4 dB P2 2 dB P1 1 dB P0 Buffer Clock Data 8-Bit Shift Register...
Description The ARA2004 is designed to provide the reverse path amplification and output level control functions in a CATV Set-Top Box or Cable ...
Reverse Path Amplifiers

File Size 258.46K  /  20 Page

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    Motorola Mobility Holdings, Inc.
Part No. MTP29N15E
OCR Text ...silicon gate this advanced tmos efet is designed to withstand high energy in the avalanche and commutation modes. the new energy efficient design also offers a draintosource diode with a fast recovery time. designed for low voltage, high sp...
Description TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0.07 OHM 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 75.95K  /  4 Page

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