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				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text	...0 10 0 0 20 40 60 80 A 120 Eoff eon E = f (RG) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, IC = 50 A 120 mWs 100 E 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 Eoff eon IC 120 RG Semiconductor Group 7...
Description	IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块（半桥包括快速续流二极管的绝缘金属基片包 From old datasheet system
File Size	111.79K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	CPV364M4K
OCR Text	... ge Q gc t d(on) tr t d(off) tf eon Eoff Ets t sc t d(on) tr t d(off) tf Ets LE Cies Coes Cres t rr I rr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay ...
Description	IGBT SIP MODULE
File Size	269.79K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA100TS120U
OCR Text	...Qg Qge Qgc td(on) tr td(off) tf eon Eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay ...
Description	HALF-BRIDGE IGBT INT-A-PAK 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
File Size	268.82K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA125TS120U
OCR Text	...Qg Qge Qgc td(on) tr td(off) tf eon Eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay ...
Description	1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package HALF-BRIDGE IGBT INT-A-PAK
File Size	220.37K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA50TS120U
OCR Text	...Qg Qge Qgc td(on) tr td(off) tf eon Eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di (rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay...
Description	HALF-BRIDGE IGBT INT-A-PAK 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
File Size	208.85K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA75TS120U GA75TS120UPBF
OCR Text	...g Qge Q gc td(on) tr td(off) tf eon Eoff (1) Ets (1) Cies Coes Cres t rr I rr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Del...
Description	Ultra-FastTM Speed IGBT 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package 75 A, 1200 V, N-CHANNEL IGBT
File Size	255.15K / 10 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SGW25N120
OCR Text	...ing energy td(on) tr td(off) tf eon Eoff Ets T j =2 5 C , V C C = 80 0 V, I C = 2 5 A, V G E = 15 V /0 V , R G = 22 , 1) L =1 8 0n H, 1) C = 4 0p F Energy losses include "tail" and diode reverse recovery. 45 40 730 30 2.2 1.5 3.7 60 52 95...
Description	IGBTs & DuoPacks - 25A 1200V TO247AC IGBT Fast IGBT in NPT-technology TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,49A I(C),TO-247AC
File Size	375.62K / 11 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPD2845GR UPD2845GR-E1 UPD2845GR-E2
OCR Text	...w) VDD1 FIN GND FR RESET EO EOP eon XI XO LE CLK DATA PS NC VDD2 Caution Electro-static sensitive devices Document No. P12150EJ2V0DS00 (2nd edition) (Previous No. IC-3291) Date Published February 1997 N Pi di J (c) 1994 PPD28...
Description	1 V, 1.3 mA, 94MHz PLL SYNTHESIZER LSI FOR PAGER SYSTEM
File Size	135.32K / 16 Page	View it Online	Download Datasheet

				http:// FAIRCHILD[Fairchild Semiconductor] INTERSIL[Intersil Corporation] Fairchild Semiconductor Corporation
Part No.	HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723
OCR Text	...QG(ON) td(ON)I trI td(OFF)I tfI eon EOFF RJC IC = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20V 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse an...
Description	40A/ 600V/ UFS Series N-Channel IGBTs 40A, 600V, UFS Series N-Channel IGBTs From old datasheet system XC9536-6VQ44C - NOT RECOMMENDED for NEW DESIGN 40 A, 600 V, N-CHANNEL IGBT
File Size	137.79K / 6 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	HGT1S20N60C3R HGT1S20N60C3RS HGTG20N60C3R HGTP20N60C3R
OCR Text	...RI tD(OFF)I tFI dVCE/dt dVCE/dt eon EOFF RJC IC = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20V - 9.0 87 116 34 40 390 330 1.3 7.0 2.3 3.0 - 110 150 500 400 0.76 V nC nC ns ns ns ns V/ns V/ns mJ mJ oC/W Current Turn-On Delay...
Description	40A/ 600V/ Rugged UFS Series N-Channel IGBTs 40A, 600V, Rugged UFS Series N-Channel IGBTs
File Size	107.60K / 6 Page	View it Online	Download Datasheet

For eon Found Datasheets File :: 4860 Search Time::2.141ms
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