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STMicroelectronics N.V. ST Microelectronics
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Part No. |
STB11NM60FD STB11NM60FD-1 STB11NM60FDT4 STP11NM60FD
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OCR Text |
...to-220/to-220fp/i 2 pak/d 2 pak fdmesh?power mosfet (with fast diode) typical r ds (on) = 0.40 ? high dv/dt and avalanche capabilities 100% avalanche tested low input capacitance and gate charge low gate input resistance tight p... |
Description |
11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET N-CHANNEL 600V - 0.40ohm - 11A TO-220 / TO-220FP/I2PAK fdmeshPower MOSFET with FAST DIODE N沟道600V 0.40ohm - 11A 220 / TO-220FP/I2PAK fdmesh?功率MOSFET,快速二极管 N-CHANNEL 600V - 0.40 OHM - 11A TO-220/TO-220FP/I2PAK/D2PAK fdmesh MOSFET (WITH FAST DIODE)
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File Size |
332.42K /
13 Page |
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it Online |
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ST Microelectronics
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Part No. |
STP11NM60FD STP11NM60FDFP
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OCR Text |
fdmesh?power mosfet (with fast diode) (1)i sd <11a, di/dt<400a/ s, v dd <v (br)dss , t j <t jmax (*)limited only by maximum temperature allowed n typical r ds (on) = 0.40 w n high dv/dt and avalanche capabilities n 100% avalanche tested n l... |
Description |
N-CHANNEL 600V 0.40 OHM 11A TO-220/TO-220FP fdmesh POWER MOSFET
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File Size |
321.95K /
9 Page |
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it Online |
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ST Microelectronics
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Part No. |
STW43NM60ND
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OCR Text |
...0 v - 0.075 ? - 35 a - to-247 fdmesh? power mosfet (with fast diode) features the worldwide best r ds(on) *area amongst the fast recovery diode devices 100% avalanche tested low input capacitance and gate charge low gate input resist... |
Description |
Power MOSFETs
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File Size |
175.59K /
9 Page |
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it Online |
Download Datasheet
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