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  low current drain at stby mode Datasheet PDF File

For low current drain at stby mode Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    IRFF120 IRFF121 IRFF122 IRFF123

General Electric Solid State
GE Solid State
Part No. IRFF120 IRFF121 IRFF122 IRFF123
Description N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-mode POWER MOS FIELD-EFFECT TRANSISTORS

File Size 161.85K  /  5 Page

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    General Electric Solid State
Part No. IRF132
Description N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 100V. Continuous drain current 48A.

File Size 160.91K  /  5 Page

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    General Electric Solid State
Part No. IRF452
Description N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A.

File Size 191.64K  /  5 Page

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    IRFF110 IRFF111 IRFF112 IRFF113

General Electric Solid State
GE Solid State
Part No. IRFF110 IRFF111 IRFF112 IRFF113
Description N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 60V. Continuous drain current 3.5A.

File Size 173.01K  /  5 Page

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    IRFF130 IRFF131 IRFF132 IRFF133

General Electric Solid State
GE Solid State
Part No. IRFF130 IRFF131 IRFF132 IRFF133
Description N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 60V. Continuous drain current 7.0A.
N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 60V. Continuous drain current 8.0A.
N-CHANNEL ENHANCEMENT-mode POWER FIELD-EFFECT TRANSISTORS
N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 100V. Continuous drain current 7.0A.

File Size 161.86K  /  5 Page

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    ST730A ST730AB ST730ABD ST730ABD-TR ST730ABN ST730AC ST730ACD ST730ACD-TR ST730ACN ST730 ST730ACDTR

意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. ST730A ST730AB ST730ABD ST730ABD-TR ST730ABN ST730AC ST730ACD ST730ACD-TR ST730ACN ST730 ST730ACDTR
Description MOSFET; Transistor Polarity:N Channel; Continuous drain current, Id:2.85A; On-Resistance, Rds(on):0.09ohm; Package/Case:8-SOIC; Leaded Process Compatible:No; Mounting Type:surface mount; Peak Reflow Compatible (260 C):No
5V STEP-DOWN, current-mode PWM DC-DC CONVERTERS
5V STEP-DOWN current mode PWM DC-DC CONVERTERS

File Size 259.01K  /  9 Page

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    TY Semiconductor Co., Ltd
Part No. KRF7805Z
Description Continuous drain current, VGS 10V, Ta = 25 A Pulsed drain current IDM 120 A

File Size 186.45K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. HT5125F
Description low current drain at standby mode

File Size 690.57K  /  4 Page

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    Philips
Part No. PNP3055E
Description PowerMOS transistor. drain-source voltage 60 V. drain current(DC) 12 A.

File Size 66.23K  /  7 Page

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    HCF4000 HCF4000B HCF4001 HCF4001B HCF4002 HCF4002B HCC4001 HCC4001B HCC_HCF4001B HCF4025BM1 HCC_HCF4025B HCF4025BEY HCC4

ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
Part No. HCF4000 HCF4000B HCF4001 HCF4001B HCF4002 HCF4002B HCC4001 HCC4001B HCC_HCF4001B HCF4025BM1 HCC_HCF4025B HCF4025BEY HCC4000 HCC4000B HCC4000BF HCC4001BF HCC4002 HCC4002B HCC4002BF HCC4025 HCC4025B HCC4025BF HCF4000BC1 HCF4000BEY HCF4000BM1 HCF4001BC1 HCF4001BEY HCF4001BM1 HCF4002BC1 HCF4002BEY HCF4002BM1 HCF4025 HCF4025B HCF4025BC1 HCC4002B-4025B HCF4002B-4025B HCF4000B-4001B HCC4000B-4001B FXXXXBM1 HCCXXXXBF 4000B 4002B
Description    NOR GatE
(289.19 k)
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,6A I(D),TO-3 RoHS Compliant: Yes
T-PNP-SI-AF PO- .75W
T-NPN- SI-PO & SW-PD 40 W 或非
MOSFET-PWR N-CH HI SPEED 或非
MOSFET; Transistor Polarity:P Channel; Continuous drain current, Id:10.5A; On-Resistance, Rds(on):0.3ohm; Package/Case:3-TO-220; Continuous drain current - 100 Deg C:7.5A; Continuous drain current - 25 Deg C:10.5A 或非
MOSFET-PWR 800V 4A 或非
NOR GatE 或非
MOSFET-PWR 500V 8A

File Size 288.46K  /  13 Page

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