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  mos-fet igbt Datasheet PDF File

For mos-fet igbt Found Datasheets File :: 66    Search Time::2.032ms    
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    TLP250

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. TLP250
OCR Text ...nditionor igbt Gate Drive Power MOS FET Gate Drive The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a integrated photodetector. This unit is 8-lead DIP package. TLP250 is suitable for gate driving circuit of igbt or power M...
Description TRANSISTOR INVERTER FOR AIR CONDITIONOR igbt GATE DRIVE POWER MOS FET GATE DRIVE

File Size 149.25K  /  8 Page

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    TLP351

Toshiba Semiconductor
Part No. TLP351
OCR Text MOS FET Gate Drive Industrial Inverter The TOSHIBA TLP351 consists of a GaAAs light emitting diode and a integrated photodetector. This unit is 8-lead DIP package. TLP351 is suitable for gate driving circuit of igbt or power MOS FET. Espec...
Description Photocoupler GaA .As IRED Photo IC
TOSHIBA Photocoupler GaAAs IRED Photo IC

File Size 158.55K  /  8 Page

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    IRFPS3810

IRF[International Rectifier]
Part No. IRFPS3810
OCR Text ...65 [.065] LEAD ASS IGNMENT S MOS FET 1 - GAT E 2 - DRAIN 3 - S OURCE 4 - DRAIN igbt 1 - GAT E 2 - COLLECT OR 3 - EMIT T ER 4 - COLLECT OR Data and specifications subject to change without notice. This product has been designed and qua...
Description Power MOSFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A?
Power MOSFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A)
Power MOSFET(Vdss=100V Rds(on)=0.009ohm Id=170A)
Power MOSFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A?)

File Size 122.48K  /  8 Page

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    PC929

Sharp Electrionic Component...
SHARP[Sharp Electrionic Components]
Sharp Corporation
Part No. PC929
OCR Text ...r Suitable for Inverter-Driving mos-fet/igbt s Outline Dimensions 14 13 12 11 10 9 8 g TUV ( VDE 0884 ) approved type is also available as an option. (Unit : mm) Primary side mark 1 2 3 4 5 6 7 s Application 1. igbt control for ...
Description Shortcircuit Protector Circuit Built-in Photocoupler Suitable for Inverter-Driving mos-fet/igbt

File Size 94.72K  /  6 Page

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    PC923

Sharp Electrionic Component...
Sharp Electrionic Components
Part No. PC923
OCR Text mos-fet/ igbt drive ( IO1P , I O2P : 0.4A) 2. High speed response ( t PLH , t PHL : MAX. 0.5 s ) 3. Wide operating supply voltage range ( Vcc : 15 to 30V, Ta = -10 to 60C ) 4. High noise reduction type ( CM H = MIN. - 1 500V/ s ) ( CM L =...
Description High Speed Photocoupler for mos-fet / igbt Drive

File Size 85.69K  /  6 Page

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    Sharp Corp
Sharp Electrionic Component...
Part No. PC923X PC923XI
OCR Text mos-fet/igbt Drive Features (1) Built-in direct drive circuit for mos-fet/igbt drive (IO1P, IO2P : 0.4 A) (2) High speed response (tPHL,tPLH : MAX. 0.5 s) (3) Wide operating supply voltage range (VCC : 15 to 30 V, Ta= -10 to 60 C ) (4) Hig...
Description AMPLIFIER-OUTPUT OPTOCOUPLER,1-CHANNEL,5KV ISOLATION,DIP
From old datasheet system
High Speed OPIC Photocoupler for mos-fet/igbt Drive

File Size 42.17K  /  3 Page

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    IRFPS40N50L

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFPS40N50L
OCR Text ... [.065] LE AD AS S IGNMENT S MOS FET 1 - GATE 2 - DRAIN 3 - S OURCE 4 - DRAIN igbt 1 - GATE 2 - COLLECT OR 3 - EMIT T ER 4 - COLLECT OR Data and specifications subject to change without notice. This product has been designed and quali...
Description Power MOSFET(Vdss=500V, Rds(on)typ.=0.087ohm, Id=46A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)典\u003d 0.087ohm,身份证\u003d 46A条)

File Size 109.47K  /  8 Page

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    TLP250INV

Toshiba Semiconductor
Part No. TLP250INV
OCR Text ...NDITIONER igbt GATE DRIVE POWER MOS FET GATE DRIVE The TOSHIBA TLP250(INV) consists of a GaAlAs light emitting diode and a integrated photodetector. This unit is 8-lead DIP. TLP250(INV) is suitable for gate driving circuit of igbt or power...
Description TRANSISTOR INVERTER INVERTERS FOR AIR CONDITIONER igbt GATE DRIVE POWER MOS FET GATE DRIVE

File Size 215.54K  /  7 Page

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    IRF[International Rectifier]
Part No. IRFPS43N50K IRFPS43N50
OCR Text ... [.065] LE AD AS S IGNMENT S MOS FET 1 - GATE 2 - DRAIN 3 - S OURCE 4 - DRAIN igbt 1 - GATE 2 - COLLECT OR 3 - EMIT T ER 4 - COLLECT OR Data and specifications subject to change without notice. This product has been designed and quali...
Description 500V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package
Power MOSFET(Vdss=500V, Rds(on)typ.=0.078ohm, Id=47A)
Power MOSFET(Vdss=500V Rds(on)typ.=0.078ohm Id=47A)

File Size 98.65K  /  8 Page

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    TLP701

Toshiba Semiconductor
Part No. TLP701
OCR Text MOS FET gate drive TLP701 consists of a GaAAs light-emitting diode and an integrated photodetector. This unit is 6-lead SDIP package. The TLP701 is 50% smaller than the 8-pin DIP and meets the reinforced insulation class requirements of in...
Description INDUSTRIAL INVERTERS INVERTER FOR AIR CONDITIONERS igbt/POWER MOS FET GATE DRIVE

File Size 174.91K  /  8 Page

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For mos-fet igbt Found Datasheets File :: 66    Search Time::2.032ms    
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