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  n-channel tmos power fet 1000 Datasheet PDF File

For n-channel tmos power fet 1000 Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100E-D

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100E-D
Description tmos power fet 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM tmos14安培,功率场效应晶体000伏特的RDS(on)\u003d 0.80欧姆
tmos power fet 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, n-channel, Si, power, MOSfet, TO-264AA
From old datasheet system
tmos E-fet power Field Effect Transistor n-channel Enhancement Mode Silicon Gate

File Size 232.49K  /  8 Page

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    MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D

MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
Part No. MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D
Description tmos E-fet power Field Effect Transistor n-channel Enhancement-Mode Silicon Gate
From old datasheet system
tmos power fet 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, n-channel, Si, power, MOSfet, TO-220AB

File Size 206.08K  /  8 Page

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    MTP1N100E_D ON2558 MTP1N100E MTP1N100E-D

ON Semiconductor
Motorola, Inc
Part No. MTP1N100E_D ON2558 MTP1N100E MTP1N100E-D
Description tmos E-fet power Field Effect Transistor n-channel Enhancement - Mode Silicon Gate
From old datasheet system
tmos power fet 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM

File Size 203.42K  /  8 Page

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    MTV10N100E_D ON2669 MTV10N100E-D

ON Semiconductor
Part No. MTV10N100E_D ON2669 MTV10N100E-D
Description tmos E-fet power Field Effect Transistor D3PAK for Surface Mount n-channel Enhancement-Mode Silicon Gate
From old datasheet system
tmos power fet 10 AMPERES 1000 VOLTS

File Size 268.98K  /  10 Page

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    Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTB1N100E_D ON2398 MTB1N100E
Description tmos power fet 1.0 AMPERES 1000 VOLTS 1 A, 1000 V, 9 ohm, n-channel, Si, power, MOSfet
From old datasheet system

File Size 256.11K  /  10 Page

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    MTV6N100E MTV6N100E_D ON2675 MTV6N100E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTV6N100E MTV6N100E_D ON2675 MTV6N100E-D
Description tmos E-fet power Field Effect Transistor D3PAK for Surface Mount n-channel Enhancement - Mode Silicon Gate
tmos power fet 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM
From old datasheet system

File Size 262.08K  /  10 Page

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    MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D

Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D
Description From old datasheet system
tmos power fet 3.0 AMPERES 1000 VOLTS
tmos E-fet High Energy power fet D2PAK for Surface Mount n-channel Enhancement-Mode Silicon Gate

File Size 261.84K  /  10 Page

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    Motorola
Part No. MTP3N100
Description n-channel tmos power fet. 1000 V, 3 A, Rds(on) 4 Ohm.

File Size 158.04K  /  5 Page

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    IRF540_D ON0285 IRF540/D IRF540-D IRF540

Motorola, Inc.
ON Semiconductor
Part No. IRF540_D ON0285 IRF540/D IRF540-D IRF540
Description 27 A, 100 V, 0.07 ohm, n-channel, Si, power, MOSfet, TO-220AB
100V7A tmos power Field Effect Transistor (n-channel Enhancement Mode Silicon Gate100V7A tmos功率场效应管(N沟道增强型硅门))
From old datasheet system
tmos power fet 27 AMPERES
tmos E-fet power Field Effect Transistor n-channel Enhancement-Mode Silicon Gate

File Size 139.23K  /  6 Page

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    MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D

ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D
Description tmos E-fet power Field Effect Transistor n-channel Enhancement-Mode Silicon Gate
tmos power fet 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM
tmos power fet 12 AMPERES 60 VOLTS
From old datasheet system

File Size 239.56K  /  6 Page

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For n-channel tmos power fet 1000 Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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