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SemeLAB SEME-LAB[Seme LAB] Motorola Mobility Holdings, Inc.
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Part No. |
SMLA42CSM
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Description |
SILICON npn HIGH VOLTAGE transistor IN CERAMIC SURFACE MOUNT PACKAGE Silicon npn High Voltage transistor In Ceramic Surface Mount (Vcbo:300v,Vceo:300v,Vebo:6V)(N沟道增强高电压功率MOS场效应管(Vcbo:300v,Vceo:300v,Vebo:6V)) 高压硅npn型晶体管在陶瓷表面贴装(Vcbo00V,Vceo00V,Vebo6V的)(不适用沟道增强型,高电压功率马鞍山场效应管(Vcbo00V,Vceo00V,Vebo6V的)
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File Size |
16.25K /
2 Page |
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it Online |
Download Datasheet |
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Fairchild Semiconductor Corporation
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Part No. |
FQI22N30
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Description |
transistor | MOSFET | N-CHANNEL | 300v V(BR)DSS | 21A I(D) | TO-263 300v N-Channel MOSFET(漏源电压00V的N沟道增强型MOS场效应管)
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File Size |
729.00K /
9 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
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Part No. |
2SC1757D 2SC1756C 2SC1756E
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Description |
transistor | bjt | npn | 300v V(BR)CEO | 700MA I(C) | TO-220AB transistor | bjt | npn | 300v V(BR)CEO | 700MA I(C) | TO-220 晶体管|晶体管|叩| 300v五(巴西)总裁| 700mA的一(c)|20
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File Size |
647.12K /
8 Page |
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it Online |
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Continental Device India Limited
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Part No. |
C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2688R CSC2688Y
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Description |
10.000W Medium Power npn Plastic Leaded transistor. 300v Vceo, 200.000A Ic, 40 - 250 hFE. 10.000W Medium Power npn Plastic Leaded transistor. 300v Vceo, 0.200A Ic, 40 - 250 hFE. 10.000W Medium Power npn Plastic Leaded transistor. 300v Vceo, 0.200A Ic, 160 - 250 hFE. 10.000W Medium Power npn Plastic Leaded transistor. 300v Vceo, 0.200A Ic, 60 - 120 hFE. 10.000W Medium Power npn Plastic Leaded transistor. 300v Vceo, 0.200A Ic, 40 - 80 hFE. 10.000W Medium Power npn Plastic Leaded transistor. 300v Vceo, 0.200A Ic, 100 - 200 hFE.
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File Size |
136.14K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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