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ST Microelectronics
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| Part No. |
STU3N80K5
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| OCR Text |
... ratings symbol parameter value unit dpak to-220fp to-220 ipak v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 2.5 (1) 1. for to-220fp limited by maximum junction temperature. a i d drain current (continuous) a... |
| Description |
N-channel 800 V, 2.8 Ohm typ., 2.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package
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| File Size |
1,555.17K /
23 Page |
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it Online |
Download Datasheet
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Wolfspeed
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| Part No. |
PXAC243502FV-V1
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| OCR Text |
...c symbol min typ max unit gain g ps 14.0 15.0 ? db drain ef?ciency h d 42 45 ? % adjacent channel power rati...source breakdown voltage v gs = 0 v, i ds = 10 ma v( br)dss 65 ? ? v drain leakage current ... |
| Description |
High Power RF LDMOS FET 350W, 28V, 2300 - 2400 MHz
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| File Size |
337.52K /
10 Page |
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it Online |
Download Datasheet |
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Nexperia
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| Part No. |
PMZ320UPE
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| OCR Text |
...arameter conditions min typ max unit v ds drain-source voltage - - -30 v v gs gate-source voltage t j = 25 c -8 - 8 v i d drain current v gs = -4.5 v; t amb = 25 c [1] - - -1 a static characteristics r dson drain-source on-state resistan... |
| Description |
30 V, P-channel Trench MOSFET
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| File Size |
307.64K /
15 Page |
View
it Online |
Download Datasheet |
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Nexperia
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| Part No. |
PMZ130UNE
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| OCR Text |
...arameter conditions min typ max unit v ds drain-source voltage - - 20 v v gs gate-source voltage t j = 25 c -8 - 8 v i d drain current v gs = 4.5 v; t amb = 25 c [1] - - 1.8 a static characteristics r dson drain-source on-state resistanc... |
| Description |
20 V, N-channel Trench MOSFET
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| File Size |
314.36K /
14 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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