| |
|
 |
USHA India LTD
|
| Part No. |
2SA539
|
| Description |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
| File Size |
81.70K /
2 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Advanced Semiconductor, Inc. ADVANCED SEMICONDUCTOR INC
|
| Part No. |
HF50-12F
|
| Description |
NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 纭??灏??????朵?绠?Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V))
|
| File Size |
17.42K /
1 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|