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vceo-600v Datasheet PDF File

For vceo-600v Found Datasheets File :: 274 Search Time::1.86ms
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				NTE Electronics
Part No.	NTE256
OCR Text	...ector-Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitte...600V, VBE = 1.5V, Note 1 VCE = 600V, VBE = 1.5V, TC = +100C, Note 1 Min - - - - 400 - - - - T...
Description	Silicon NPN Transistor Darlington w/Damper Diode
File Size	23.78K / 2 Page	View it Online	Download Datasheet

				KEC Holdings KEC(Korea Electronics)
Part No.	KTA1807D KTA1807L
OCR Text	VCEO=-600V. High Speed Switching Time. : tf 1.0 s (IC=-0.5A) Low Collector Emitter Saturation Voltage. : VCE(sat)=-0.28V (IC=-0.3A, IB=-60mA) Wide Safe Operating Area (SOA). Q A C KTA1807D/L TRIPLE DIFFUSED PNP TRANSISTOR I J H ...
Description	TRIPLE DIFFUSED PNP TRANSISTOR(HIGH VOLTAGE SWITCHING POWER SUPPLY SWITCHING FOR TELEPHONES)
File Size	401.87K / 4 Page	View it Online	Download Datasheet

				Inchange Semiconductor ... Inchange Semiconductor Company Limited
Part No.	BUV48B
OCR Text	...tor-Emitter Sustaining Voltage: VCEO(SUS)= 600V (Min) High Current Capability Fast Switching Speed APPLICATIONS *Designed for switching and industrial applications from single and three-phase mains. Absolute maximum ratings(Ta=25) ...
Description	isc Silicon NPN Power Transistor
File Size	76.34K / 2 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	2SD683
OCR Text	...tor-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) High DC Current Gain: hFE= 500(Min.)@ IC= 5A APPLICATIONS High voltage and high po...600V; IE= 0 VEB= 5V; IC= 0 MIN 400 TYP 2SD683 MAX UNIT V 2.0 2.5 0.5 30 500 30 V V mA...
Description	Silicon NPN Darlington Power Transistor
File Size	178.13K / 2 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	2SD684
OCR Text	...tor-Emitter Sustaining Voltage: VCEO(SUS)= 300V(Min) High DC Current Gain: hFE= 1500(Min.)@IC= 2A Low Collector-Emitter Saturation Voltage...600V; IE= 0 500 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 500 A hFE-1 DC Cu...
Description	Silicon NPN Darlington Power Transistor
File Size	260.85K / 2 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	D44TD3 D44TD4 D44TD5
OCR Text	...tor-Emitter Sustaining Voltage: VCEO(SUS) = 300V(Min)- D44TD3 = 350V(Min)- D44TD4 = 400V(Min)- D44TD5 High Switching Speed Low Saturation ...600V;VBE(off)= 1.5V VEB= 6V; IC=0 IC= 2A ; VCE= 3V mA mA isc Websitewww.iscsemi.cn 2 ...
Description	isc Silicon NPN Power Transistors
File Size	80.53K / 2 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHE13002AU
OCR Text	...FERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFE tfi PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open ...600V; Vcc = 150V; LB = 1H; Lc = 200H Fig.24. Reverse bias safe operating area Tj Tjmax for -VBE ...
Description	Silicon Diffused Power Transistor
File Size	69.30K / 8 Page	View it Online	Download Datasheet

				Quanzhou Jinmei Electronic Co.,Ltd.
Part No.	2SC4060
OCR Text	VCEO(SUS)= 450V(Min) High Switching Speed High Reliability APPLICATIONS Designed for switching regulator and general purpose applications....600V; IE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 450V; IB= 0 0.1 mA IEB...
Description	Silicon NPN Power Transistor
File Size	56.29K / 2 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	BU810
OCR Text	...tor-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) High Switching Speed APPLICATIONS Designed for use in high frequency and efficency...600V; VBE= 0 0.2 mA ICEO Collector Cutoff Current VCE= 400V; IB= 0 1 mA IEBO...
Description	isc Silicon NPN Darlington Power Transistor
File Size	82.42K / 2 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	QM100DY-24 QM100DY-24K
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=100A, IB1=-IB2=2A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conduc...
Description	100 A, 2 CHANNEL, NPN, Si, POWER TRANSISTOR MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
File Size	100.52K / 5 Page	View it Online	Download Datasheet

For vceo-600v Found Datasheets File :: 274 Search Time::1.86ms
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