| PART |
Description |
Maker |
| CN455 |
0.900W General Purpose NPN Plastic Leaded Transistor. 140V Vceo, 1.000A Ic, 100 - 300 hFE
|
Continental Device India Limited
|
| 2N6609 2N3773 |
POWER TRANSISTORS(16A/140V/150W)
POWER TRANSISTORS(16A140V150W)
POWER TRANSISTORS(16A,140V,150W)
|
MOSPEC[Mospec Semiconductor]
|
| 2SD2639 2SB1683 |
General-Purpose Amplifier Transistors
140V / 12A, AF 60W Output Applications
140V / 12A / AF 60W Output Applications
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| LT8331 |
Low IQ Boost/SEPIC/ Flyback/Inverting Converter with 0.5A, 140V Switch
|
Linear Technology
|
| IXFN100N10S1 IXFN100N10S3 IXFN100N10S2 |
HiPerFET Power MOSFETs with Schottky Diodes 100 A, 100 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| MTB33N10E |
TMOS POWER FET 33 AMPERES 100 VOLTS 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
|
| STK401-130 STK400-010 STK400-020 STK400-030 STK400 |
Two-Channel AF Power Amplifier ( - Power Supply) 100 W 100 W Minimum, THD = 0.4%
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| APT20M22LVFR APT20M22LVFRG |
Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| APT10M11JVFR |
Power FREDFET; Package: ISOTOP®; ID (A): 144; RDS(on) (Ohms): 0.011; BVDSS (V): 100; 144 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
