PART |
Description |
Maker |
FS70UMJ-03 |
Power MOSFETs: FS Series, Low Voltage, 30V for High-Speed Switching Use
|
Mitsubishi Electric Corporation
|
RJJ0315DPA-15 |
-30V, -35A, 5.9mΩmax. P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK0391DPA RJK0391DPA-00-J5A RJK0391DPA-13 RJK0391 |
N Channel Power MOS FET High Speed Power Switching 30V, 50A, 2.9m?max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03N7DPA |
30V, 35A, 4.4m max.Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03N4DPA |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03N3DPA |
30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
2SD1235 2SB919 |
NPN Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications PNP Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications PNP/NPN Epitaxial Planar Silicon Transistors
|
Sanyo
|
BAS16-02 BAS16-02L BAS16-03 BAS16-07L4 BAS16U BAS1 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching Latest Silicon Discretes - Switching Diode for high speed switching Silicon Switching Diode 硅开关二极管
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
FS3UM-18 FS3UM-18A FS4VS-12 FS20SM-6 FS40SM-6 FS3U |
HIGH-SPEED SWITCHING USE 高速开关使 Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric, Corp. Powerex Power Semiconductors MITSUBISHI[Mitsubishi Electric Semiconductor]
|
KSC2335 KSC2335OTU KSC2335R KSC2335RTU KSC2335Y KS |
NPN Epitaxial Silicon Transistor High Speed, High Voltage Switching High Speed/ High Voltage Switching
|
FAIRCHILD[Fairchild Semiconductor]
|
2SK2036 E001425 |
N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCHING APPLICATIONS) From old datasheet system HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCHING APPLICATIONS
|
Toshiba Semiconductor
|
DCA01006 DCA010-TB-E |
Very High-Speed Switching Diode Silicon Epitaxial Planar Type (Anode Common) Very High-Speed Switching Diode
|
Sanyo Semicon Device
|