PART |
Description |
Maker |
FQD2N100 FQU2N100 FQU2N100TU FQD2N100TF FQD2N100TM |
1000V N-Channel QFET 1000V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
APT1004R2KN APT1004RKN |
POWER MOS IV 1000V 3.6A 4.00 Ohm / 1000V 3.5A 4.20 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
STU7NB100 6508 |
N - CHANNEL 1000V - 1.2 - 7.3A - Max220 PowerMESH TM MOSFET From old datasheet system N - CHANNEL 1000V - 1.2ohm - 7.3A - Max220 PowerMESH MOSFET
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
STW11NK100Z |
N-CHANNEL 1000V 1.1 OHM 8.3A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET N-CHANNEL 1000V - 1.1W - 8.3A TO-247 Zener-Protected SuperMESH⑩Power MOSFET
|
ST Microelectronics STMicroelectronics
|
SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB SEME-LAB[Seme LAB]
|
AOD2N100 |
1000V,2A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
TT electronics Semelab Limited Semelab(Magnatec)
|
STW6NB100 |
N-CHANNEL 1000V - 2.3 OHM - 5.4A - TO-247 POWERMESH MOSFET
|
ST Microelectronics
|
STW11NK100Z |
N-channel 1000V - 1.1Ω - 8.3A - TO-247 Zener - Protected SuperMESH PowerMOSFET
|
STMicroelectronics
|
STP4NB100 STP4NB100FP |
N-CHANNEL 1000V - 4 OHM - 3.8A - TO-220/TO-220FP POWERMESH MOSFET
|
ST Microelectronics
|
IRFNG40 |
POWER MOSFET N-CHANNEL(BVdss=1000V, Rds(on)=3.5ohm, Id=3.9A)
|
IRF[International Rectifier]
|
04F6326 04F8828 04F8908 04F8804 |
WIDERSTAND DRAHT EMAILL 2R0 1000V 300W WIDERSTAND DRAHT EMAILL 3R1 1000V 300W WIDERSTAND DRAHT EMAILL 8R0 1000V 300W WIDERSTAND线材EMAILL 8R0 1000V 300W WIDERSTAND DRAHT EMAILL 10R0 1000V 300W
|
Electronic Theatre Controls, Inc.
|