| PART |
Description |
Maker |
| 1SS302TE85LF 1SS302T5LFH |
Ultra High Speed Switching Applications
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| KTK5131E |
SMOS FET/ Analog Switch Application
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| IP4284CZ10-TBR IP4284CZ10-TT |
ESD protection for ultra high-speed interfaces TVs, monitors
ESD protection for ultra high-speed interfaces UNIDIRECTIONAL, SILICON, TVS DIODE
|
NXP Semiconductors N.V.
|
| 1SS200 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS309 |
DIODE (ULTRA HIGH SPEED SWITCHING APLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS181 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS302 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| NTE2558 |
Silicon NPN Transistor Darlington, High Voltage, High Speed Switch w/ Damper Diode
|
NTE[NTE Electronics]
|
| 5962F9467602VPA 5962F9467602VPC HS7B-1100RH-Q HS7- |
Radiation Hardened/ Ultra High Speed Current Feedback Amplifier with Offset Adjust
Radiation Hardened, Ultra High Speed
Current Feedback Amplifier(抗辐射超高速电流反馈放大器)
Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Gray; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
Radiation Hardened, Ultra High Speed Current Feedback Amplifier VIDEO AMPLIFIER, CDIP8
Radiation Hardened, Ultra High Speed Current Feedback Amplifier 1 CHANNEL, VIDEO AMPLIFIER, CDIP8
Radiation Hardened, Ultra High Speed Current Feedback Amplifier
|
Intersil Corporation
Intersil, Corp.
|
| NTE593 |
Silicon Diode, High Speed Switch
|
NTE[NTE Electronics]
|
| HN2D02FU E001993 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
