
	Part Number	Hot Search : XP4115 ATSTK RN1323A SNC533 10A02 H8NB90F SNC533 SP6649EU
	Product Description
	Full Text Search

24C16 - MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护 MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes (ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16/8/4/2/1KbitSerialICBusEEPROM

24C16_16565.PDF Datasheet

Part No.

24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST25C16M6TR ST24C16 ST24C16B1TR ST24C16B3TR ST24C16B5TR ST24C16B6TR ST24C16M1TR ST24C16M3TR ST24C16M5TR ST24C16M6TR ST24W16 ST24W16B1TR ST24W16B3TR ST24W16B5TR ST24W16B6TR ST24W16M1TR ST24W16M3TR ST24W16M5TR ST24W16M6TR ST25W16 ST25W16B1TR ST25W16B3TR

Description

MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM

File Size

125.39K / 17 Page

Maker

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: 24C16

Maker: AT

Pack: SOP8

Stock: 7240

Unit price for :

50: $0.74

100: $0.70

1000: $0.66

Email: oulindz@gmail.com

Contact us

Homepage

http://www.st.com/

Download

[ 24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST Datasheet PDF Downlaod from IC-ON-LINE.CN

]
[ 24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST Datasheet PDF Downlaod from Datasheet.HK

]
[24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST Datasheet PDF Downlaod from Maxim4U.com

] :-)

[ View it Online ] [ Search more for 24C16 ]

[ Price & Availability of 24C16 by FindChips.com ]

Full text search : MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护 MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes (ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16/8/4/2/1KbitSerialICBusEEPROM

Product Description search : MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护 MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes (ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16/8/4/2/1KbitSerialICBusEEPROM

Related Part Number

PART	Description	Maker
IRF637 IRFP256 IRFP257 IRFP242R IRF230R IRFP240R I	TRANSISTOR \| MOSFET \| N-CHANNEL \| 275V V(BR)DSS \| 6.5A I(D) \| TO-220AB TRANSISTOR \| MOSFET \| N-CHANNEL \| 275V V(BR)DSS \| 23A I(D) \| TO-247 TRANSISTOR \| MOSFET \| N-CHANNEL \| 275V V(BR)DSS \| 21A I(D) \| TO-247 TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 20A I(D) \| TO-247 TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 9A I(D) \| TO-204AA TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 500MA I(D) \| TO-250VAR TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 2.5A I(D) \| TO-205AF TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 3.5A I(D) \| TO-205AF TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 4.5A I(D) \| TO-204AA TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 400MA I(D) \| TO-250VAR 晶体管\| MOSFET的\| N沟道\| 200伏五（巴西）直\| 18A条（丁）\| TO - 220AB现有 TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 8A I(D) \| TO-204AA 晶体管\| MOSFET的\| N沟道\| 200伏五（巴西）直\| 8A条（丁）\|04AA TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 8A I(D) \| TO-220AB 晶体管\| MOSFET的\| N沟道\| 200伏五（巴西）直\| 8A条（丁）\| TO - 220AB现有 TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 5A I(D) \| TO-220AB 晶体管\| MOSFET的\| N沟道\| 200伏五（巴西）直\| 5A条（丁）\| TO - 220AB现有 TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 33A I(D) \| TO-247 晶体管\| MOSFET的\| N沟道\| 200伏五（巴西）直\|3A条（丁）\|47 TRANSISTOR \| MOSFET \| N-CHANNEL \| 275V V(BR)DSS \| 22A I(D) \| TO-204AA 晶体管\| MOSFET的\| N沟道\| 275V五（巴西）直\| 22A条（丁）\|04AA	ECM Electronics, Ltd. Fairchild Semiconductor, Corp.
BUK553-100A BUK553-100B BUK553-100A/B	TRANSISTOR UNIVERSAL MOSFET SOT PowerMOS transistor Logic level FET 12 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	NXP Semiconductors PHILIPS[Philips Semiconductors]
STB6NA80 4233 STB6NA80-1 STB6NA80T4	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 5.7A I(D) \| TO-263AB TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 5.7A I(D) \| TO-262VAR N-CHANNEL Power MOSFET N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR From old datasheet system	ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
FDP7030BLSS62Z FDB7030BLS	56 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 56A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 30V的五（巴西）直\|6A条（丁）\|63AB TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 56A I(D) \| TO-220AB	Fairchild Semiconductor, Corp. ITT, Corp. FAIRCHILD SEMICONDUCTOR CORP
Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P	Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL SIPMOS垄莽 Power-Transistor SIPMOS庐 Power-Transistor SIPMOS? Power-Transistor SIPMOS㈢ Power-Transistor	Infineon Technologies AG
IRFBL10N60A	N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞???? HEXFET Power MOSFET HEXFET? Power MOSFET 11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 11A I(D) \| TO-263VAR	IRF[International Rectifier] VISHAY SILICONIX
STB3NC60 STB3NC60T4 STB3NC60-1	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 3A I(D) \| TO-262AA TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 3A I(D) \| TO-263AB N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET	SGS Thomson Microelectronics STMicroelectronics 意法半导
IRHN250 IRHN450	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 18.5A I(D) \| SMT TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 8A I(D) \| SMT 晶体管\| MOSFET的\| N沟道\| 500V五（巴西）直\| 8A条（丁）\|贴片	Black Box, Corp.
CP757X	Small Signal MOSFET Transistor P-Channel Enhancement-Mode MOSFET Chip	Central Semiconductor Corp
TPC8015-H	MOSFET TPC Series TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 13A I(D) \| SO	TOSHIBA

Related keyword From Full Text Search System

24C16 mos	24C16 Chip	24C16 filetype:pdf	24C16 rectifier	24C16 speed
24C16 applications	24C16 controller	24C16 Series	24C16 lamp	24C16 ic查找网站