| PART |
Description |
Maker |
| 2SK18407 2SK184 |
Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK370 2SK37007 |
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK17007 2SK170 |
Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK170 K170 |
FET/ Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
FET, Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SJ74 E001300 |
P CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| SVC383 |
Diffused Junction Type Silicon Composite Varactor
AM Low Voltage Electronic Tuning Applications
|
Sanyo Semicon Device
|
| SVC385 |
Diffused Junction Type Silicon Composite Varactor AM Low Voltage Electronic Tuning Applications
|
Sanyo Semicon Device
|
| 2SK2145 E001440 |
From old datasheet system
N CHANNEL JUNCTION TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK2145 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications
|
TOSHIBA
|
| SVC203CP |
Diffused Junction Type Silicon Diode
Varactor Diode for FM Low-Voltage Electronic Tuning Use
|
SANYO[Sanyo Semicon Device]
|
| 2SK433 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss.
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE
|
Isahaya Electronics Corporation
http://
|
