| PART |
Description |
Maker |
| 2SJ109 E001254 |
P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER/ DIFFERENTIAL AMPLIFIER APPLICATIONS)
P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER, DIFFERENTIAL AMPLIFIER APPLICATIONS)
LOW NOISE AUDIO AMPLIFIER APPLICATIONS DIFFERENTIAL AMPLIFIER APPLICATIONS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK370 |
N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK11707 2SK117 |
Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK18407 2SK184 |
Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK17007 2SK170 |
Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss.
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| 2SK20907 2SK209 |
Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK369 E001534 |
From old datasheet system
N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| SVC383 |
Diffused Junction Type Silicon Composite Varactor
AM Low Voltage Electronic Tuning Applications
|
Sanyo Semicon Device
|
| 2SK371 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
TOSHIBA
|
| SVC203CP |
Diffused Junction Type Silicon Diode
Varactor Diode for FM Low-Voltage Electronic Tuning Use
|
SANYO[Sanyo Semicon Device]
|
| U1BC44 U1GC44 U1JC44 |
RECTIFIER SILICON DIFFUSED JUNCTION TYPE FOR HYBRID USE
TOSHIBA RECTIFIER SILICON DIFFUSED JUNCTION TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
