| PART |
Description |
Maker |
| 2SB1537 2SD2357 |
Silicon PNP epitaxial planer typeFor low-frequency amplification)
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| 2SK2038 K2038 |
2SK2038
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING APPLICATIONS)
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,5A I(D),TO-247VAR
From old datasheet system
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS) N通道马鞍山型（高速，高电流开关应用）
|
Toshiba.
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
| TPC8104-H |
Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)
|
Toshiba Corporation
Toshiba Semiconductor
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| 2SK2090 D11228EJ1V0DS00 |
N-Channel MOS FET FOR HIGH-SPEED SWITCHING
From old datasheet system
MOS Field Effect Transistor
|
NEC[NEC]
|
| 2SJ559 2SJ559-T1 |
Pch enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| 2SK1273 2SK1273-T2 2SK1273-T1 |
N-channel power MOS FET
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| APT10045B2FLL APT10045LFLL |
MGrid IDT Rec W/SglLRmp .76AuLF 10Ckt
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 23A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
