| PART |
Description |
Maker |
| SI4392DY-T1-E3 SI4392DY SI4392DY-E3 SI4392DY-T1 |
N-Ch. Reduced Qg, Fast Switching WFET; Extr.Low Switching Loss N沟道，低Qg，快速开WFET，超低开关损
N-Channel Reduced Qg, Fast Switching WFET
N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| STGW30NC60WD STGW30NC60WD07 GW30NC60WD |
STGW30NC60WD
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH IGBT
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH?/a> IGBT
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH垄芒 IGBT
|
STMicroelectronics
|
| STGW39NC60VD07 STGW39NC60VD |
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH⑩ IGBT
|
STMicroelectronics
|
| SIDC04D60F6 SIDC04D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip soft , fast switching
|
Infineon Technologies AG
|
| SI7112DN |
N-Channel 30 V (D-S) Fast Switching MOSFET
|
Vishay Siliconix
|
| SI7804DN SI7804DN-T1-E3 |
N-Channel 30-V (D-S) Fast Switching MOSFET
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| UTM6006G-K08-5060-R UTM6006G-S08-R |
N-CHANNEL FAST SWITCHING MOSFET
|
Unisonic Technologies
|
| SI7806BDN-T1-E3 |
N-Channel 30-V (D-S) Fast Switching MOSFET
|
Vishay Intertechnology,Inc.
|
| SI7476DP-T1-E3 SI7476DP |
N-Channel 40-V (D-S) Fast Switching MOSFET
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| SI7342DP |
N-Channel 30 V (D-S) Fast Switching MOSFET
|
Vishay
|
| SI7882DP |
N-Channel Reduced Qg, Fast Switching MOSFET
N-Channel Reduced Qg Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
