| PART |
Description |
Maker |
| AD6528 |
GSM/GPRS Digital Baseband Processor For Smartphone and Wireless Handheld Devices
AD6528 GSM/GPRS SoftFonebaseband processor
|
Analog Devices
|
| MT6223 |
GSM/GPRS Baseband Processor
|
MediaTek
|
| AD6528 |
GSM/GPRS Digital Baseband Processor
|
Analog Devices
|
| BCM2132 |
From old datasheet system
EDGE/GPRS/GSM SINGLE-CHIP MULTIMEDIA BASEBAND PROCESSOR
|
Broadcom Corporation.
|
| CX80502-38 CX80502-33 CX80502-34 CX80502-35 CX8050 |
CX805-30 Baseband Processor for Multiband GSM and GPRS Applications
|
SKYWORKS[Skyworks Solutions Inc.]
|
| AD6432 AD6432AST |
GSM 3 V Transceiver IF Subsystem
Ceramic Multilayer Capacitor; Capacitance:100000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Series:20110; Packaging:Cut Tape TELECOM, CELLULAR, BASEBAND CIRCUIT, PQFP44
|
Analog Devices, Inc.
|
| GSA8821 |
I-Bar Penta-band GSM Antenna Works with GSM / CDMA / PCS / DCS /UMTS/ WCDMA
|
List of Unclassifed Man...
|
| MW5IC2030 |
GSM/GSM EDGE, W–CDMA, PHS 1930–1990 MHz, 30 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
|
Motorola
|
| PCF5083H/5V2/F3 PCF5083H/001/F2 PCF5083H/F2 |
GSM signal processing IC TELECOM, CELLULAR, BASEBAND CIRCUIT, PQFP128
Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3122; No. of Contacts:39; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| MRF18030ASR3 MRF18030ALSR3 MRF18030ALR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| MRF18085AR3 MRF18085ALSR3 |
RF Power Field Effect Transistors
GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET
|
Motorola, Inc.
MOTOROLA[Motorola Inc]
Freescale (Motorola)
|
| MRF18030BR3 MRF18030BSR3 MRF1803BR3 MRF1803BSR3 MR |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
|
Motorola, Inc
|
