| PART |
Description |
Maker |
| PEEL16V8J-15 PEEL16V8J-25 PEEL16V8P-15 PEEL16V8P-2 |
PEEL?V8 -15/-25 CMOS Programmable Electrically Erasable Logic
PEEL??V8 -15/-25 CMOS Programmable Electrically Erasable Logic
PEEL⑩6V8 -15/-25 CMOS Programmable Electrically Erasable Logic
|
List of Unclassifed Manufacturers
ETC
|
| TC57512AD-15 TC57512AD-20 |
65536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
|
ETC
List of Unclassifed Manufacturers
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| 22CV10AZ-25 PEEL22CV10AZT-25 PEEL22CV10AZP-25 PEEL |
CMOS Programmable Electrically Erasable Logic Device
|
List of Unclassifed Manufacturers
ETC
|
| HN27C64FP |
8192-WORD X 8BIR ONE TIME ELECTRICALLY PROGRAMMABLE CMOS ROM
|
Hitachi Semiconductor
|
| HN58C256FP-20 |
32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM
|
Hitachi Semiconductor
|
| PA7128J-15 PA7128J-20 PA7128JI-20 PA7128S-15 PA712 |
15ns programmable electrically erasable logic array
20ns programmable electrically erasable logic array
|
ICT
|
| AT25080B-XHL-B AT25080B-SSHL-B AT25080B-SSHL-T AT2 |
serial electrically-erasable programmable read-only memory
|
ATMEL Corporation
|
| MACH111SP MACH231-14JI/1 MACH131-14JI/1 MACH131-5J |
EMITTER IR 880NM 5MM SMD RADIAL
SUR ABSORBER 7MM 430V 1250A ZNR
High-Performance EE CMOS Programmable Logic EE PLD, 14 ns, PQCC44
High-Performance EE CMOS Programmable Logic EE PLD, 7.5 ns, PQFP100
High-Performance EE CMOS Programmable Logic EE PLD, 14 ns, PQCC84
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQCC84
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQFP100
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQCC68
High-Performance EE CMOS Programmable Logic EE PLD, 10 ns, PQFP100
High-Performance EE CMOS Programmable Logic EE PLD, 7.5 ns, PQCC68
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQFP44
High-Performance EE CMOS Programmable Logic EE PLD, 10 ns, PQFP44
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQCC44
INDUSTRIAL TO RJ45 CAT5E PATCH CORD 15FT EE PLD, 18 ns, PQCC44
INDUSTRIAL TO INDUSTRIAL CAT6 PATCH CORD 5FT EE PLD, 18 ns, PQCC44
INDUSTRIAL TO RJ45 CAT6 PATCH CORD 20FT EE PLD, 15 ns, PQCC84
High-Performance EE CMOS Programmable Logic EE PLD, 15 ns, PQCC44
High-Performance EE CMOS Programmable Logic EE PLD, 15 ns, PQFP44
INDUSTRIAL TO RJ45 CAT5E PATCH CORD 20FT EE PLD, 18 ns, PQCC44
RES 3.32K-OHM 1% 0.1W 100PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
RJ45-DB9M (DTE)
Silver Mica Capacitor; Capacitance:62pF; Capacitance Tolerance: /- 5%; Series:CD15; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.9mm; Leaded Process Compatible:No RoHS Compliant: No
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
|
| AT93C56B-MEHM-T AT93C66B-MEHM-T AT93C56B-CUM-T AT9 |
Three-wire Serial Electrically Erasable Programmable Read-only Memory
|
ATMEL Corporation
|
| AT24C02C |
Two-wire Serial Electrically Erasable and Programmable Read-only Memory
|
ATMEL
|
