| PART |
Description |
Maker |
| BZX85C30 BZX85C33 BZX85C6V2 BZX85C6V8 BZX85C43 BZX |
18V, 1W Zener Diode
Zeners
5.1V, 1W Zener Diode
4.7V, 1W Zener Diode
3.9V, 1W Zener Diode
6.2V, 1W Zener Diode
5.6V, 1W Zener Diode
11V, 1W Zener Diode
10V, 1W Zener Diode
8.2V, 1W Zener Diode
27V, 1W Zener Diode
13V, 1W Zener Diode
22V, 1W Zener Diode
51V, 1W Zener Diode
56V, 1W Zener Diode
33V, 1W Zener Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| MGP7N60ED MGP7N60ED_D ON1877 ON1876 |
Insulated Gate Bipolar Transistor withr Anti-Parallel Diode
IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| US5L91 |
General purpose transistor (isolated transistor and diode)
|
Rohm
|
| US5L9 |
General purpose transistor (isolated transistor and diode)
|
ROHM[Rohm]
|
| US5L12 |
General purpose transistor (isolated transistor and diode)
|
ROHM[Rohm]
|
| UML11N EML11 |
GENERAL PURPOSE TRANSISTOR (ISOLATED TRANSISTOR AND DIODE)
|
ROHM[Rohm]
|
| EML2008 |
General purpose transistor (isolated transistor and diode)
|
Rohm
|
| QSL10 |
General purpose transistor (isolated transistor and diode)
|
ROHM[Rohm]
|
| MGY25N120D_D ON1933 MGY25N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
From old datasheet system
IGBT & DIODE IN TO-264 25 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
|
ONSEMI[ON Semiconductor]
|
| IRG4BC30KD-S IRG4BC30KD-STRR IRG4BC30KDS IRG4BC30K |
600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
