PART |
Description |
Maker |
IRF7306PBF |
GENERATION V TECHNOLOGY
|
International Rectifier
|
IRLML5103TRPBF |
Generation V Technology
|
TY Semiconductor Co., L...
|
IRF7303 |
Generation V Technology
|
Kersemi Electronic Co., Ltd...
|
IRLMS6702 IRLMS6702TR |
Generation V Technology HEXFET Power MOSFET
|
International Rectifier
|
IRLML2803TRPBF |
Generation V Technology, Ultra Low On-Resistance
|
International Rectifier
|
KRF7401 |
Generation V Technology Ultra Low On-Resistance N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
SGB07N120 SGB07N12007 |
Fast IGBT in NPT-technology lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGB02N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGW25N12009 SGW25N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
IRF7201 IRF7201PBF IRF7201TR |
Generation V Technology 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
SGP10N60A SGW10N60A SGP10N60A09 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|