| PART |
Description |
Maker |
| PDTD113ZT PDTD113ZT215 PDTD113ZT-13 PDTD113ZT-15 |
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
NPN 500 mA, 50 V resistor-equipped transistor R1 = 1 kW, R2 = 10 kW
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
| PEMH14 PUMH14 5C H1- H1P H1T H1W |
NPN/NPN resistor-equipped transistors R1 = 47 kohm, R2 = open NPN/NPN配电阻型晶体管；R1=47千欧姆，R2=开
NPN/NPN resistor-equipped transistors R1 = 47 kW-ohm, R2 = open
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PDTD123TT PDTD123TK PDTD123TS |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open NPN配电阻型晶体管：耐压0V，电00mAR1 = 2.2 千欧 R2 =开
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
|
NXP Semiconductors N.V.
|
| PDTC115E PDTC115EE PDTC115EEF PDTC115EK PDTC115EM |
NPN resistor-equipped transistors; R1 = 100 kohm, R2 = 100 kohm 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PIMN31 |
500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW
|
http://
|
| PDTC114EE |
NPN resistor-equipped transistor
|
Philips
|
| PDTC124E PDTC124EE PDTC124EEF PDTC124EK PDTC124EM |
NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
NPN resistor-equipped transistors; R1 = 22 k楼?, R2 = 22 k楼?
|
NXP Semiconductors
|
| PDTC114EK |
NPN resistor-equipped transistor
|
Philips
|
| PDTC144TEF |
NPN resistor-equipped transistor;
|
Philips
|
| PDTC143XK |
NPN resistor-equipped transistor;
|
Philips
|
| PDTC124ES |
NPN resistor-equipped transistor
|
Philips
|
