| PART |
Description |
Maker |
| RF51171 |
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER
|
RF Micro Devices
|
| RF5117 RF5117PCBA |
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER
|
RFMD[RF Micro Devices]
|
| RF5117PCBA-41X RF511706 RF5117 |
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER
|
RFMD[RF Micro Devices]
|
| SZP-3026Z |
3.0-3.8GHz 2W InGaP Amplifier
|
SIRENZA[SIRENZA MICRODEVICES]
|
| CHA6015-99F |
2-8GHz High Power Amplifier
|
United Monolithic Semic...
|
| NBB-X-K1 NBB-402 NBB-402_06 NBB-402-E NBB-402-T1 N |
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 8GHz
|
http://
RFMD[RF Micro Devices]
|
| MAX2700 MAX2700ECM MAX2701 MAX2700-MAX2701 MAX2701 |
1.8GHz to 2.5GHz.Direct-Downconversion Receivers
1.8GHz.5GHz的直接变频接收器
1.8GHz to 2.5GHz Direct Downconversion Receivers RF/MICROWAVE DOWN CONVERTER
|
Maxim Integrated Products, Inc.
|
| MAX11014BGTM MAX11015BGTM MAX11015 |
Automatic RF MESFET Amplifier Drain-Current Controllers
|
MAXIM[Maxim Integrated Products]
|
| MAX11015BGTM |
Automatic RF MESFET Amplifier Drain-Current Controllers 自动射频场效应管放大器漏极电流控制器
|
Maxim Integrated Products, Inc.
|
| NE6500379A-T1 |
3W L / S-BAND POWER GaAs MESFET
3W L, S-BAND POWER GaAs MESFET 3W升，S波段功率GaAs MESFET
|
NEC Corp.
NEC, Corp.
|
| NE67483B |
(NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET
|
CEL
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
