PART |
Description |
Maker |
MT46H16M32LG MT46H32M16LF MT46H32M16LFBF-6ITC MT46 |
512Mb: x16, x32 Mobile Low-Power DDR SDRAM Features
|
Micron Technology
|
M58LV064A150ZA1T M58LV064A150ZA6T M58LV064B150N1T |
64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories 64兆位4Mb的x16或功能的2Mb X32号,统一座,突发3V电源闪存
|
STMicroelectronics N.V.
|
K7A203200B K7A203600B-QCI14 K7A203200B-QC14 K7A203 |
64Kx36/x32 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
UPD431632LGF-A7 UPD431632LGF-A6 |
x32 Fast Synchronous SRAM X32号,快速同步SRAM
|
Electronic Theatre Controls, Inc.
|
UPD431132LGF-10 UPD431132LGF-14 UPD431132LGF-12 |
x32 Fast Synchronous SRAM X32号,快速同步SRAM
|
ON Semiconductor
|
GA81032Q-5I GA81032Q-5IT GA81032Q-150 GA81032Q-150 |
x32 Fast Synchronous SRAM X32号,快速同步SRAM
|
Enpirion, Inc. Citizen Finetech Miyota
|
CY7C1334-80AC CY7C1334-133AC CY7C1334-50AC |
x32 Fast Synchronous SRAM X32号,快速同步SRAM
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
AS7C3128K32P-3.5TQC AS7C3128K36P-3.5TQC AS7C3128K3 |
x36 Fast Synchronous SRAM x36快速同步SRAM x32 Fast Synchronous SRAM X32号,快速同步SRAM
|
Leoco, Corp. Vishay Semiconductors
|
HY57V28162 HY57V281620ELT HY57V281620ELT-5 HY57V28 |
SDRAM - 128Mb 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
|
HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
K4S643232H K4S643232H-TC_L60 K4S643232H-TC60 K4S64 |
2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86 64Mb H-die (x32) SDRAM Specification 64芯片(X32号)内存规格
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
HY6716110C-25 HY6716110C-15 |
x16 Fast Synchronous SRAM
|
|