PART |
Description |
Maker |
3404.2420.XX 3404.2417.XX 3404.2412.XX 3404.2413.X |
Surface Mount Fuse with Clip, 11.1 x 3.8 mm, Time-Lag T, UMZ 250 = UMT 250 (Au) UMC 250
|
Schurter Inc.
|
MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
AR371S34 AR371 |
3400 V, 920 A, 5.6 kA rectifier diode
|
POSEICO SPA POSEICO[Power Semiconductors]
|
SUU40N06-24 SUD40N06-24 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 37A I(D) | TO-251 Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算,低反向泄露,低噪声稳压二极
|
Vishay Intertechnology, Inc.
|
0918BD41D050 |
920/1885 MHz Dual Band Balun
|
Johanson Technology Inc.
|
SUM60N04-12LT |
Temperature Sensing MOSFET,N-Channel 40-V (D-S) Temperature Sensing MOSFET, N-Channel 40-V (D-S) Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
|
Vishay Siliconix
|
SU25B12TG SU80C12TG SU50C12TG SU50B12TG SU25A12TG |
ZENER DIODES TRANSISTOR | JFET | N-CHANNEL | 120V V(BR)DSS | CHIP Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算,低反向泄露,低噪声稳压二极
|
Nihon Inter Electronics, Corp. Cornell Dubilier Electronics, Inc.
|
MLO80100 MLO80100-00940 |
Surface Mount Voltage Controlled Oscillator EGSM 920 - 960 MHz
|
Electronic Theatre Controls, Inc. MA-Com Tyco Electronics ETC List of Unclassifed Manufacturers
|
STEVAL-IKR001V6 |
Sub-GHz transceiver development kit based on the SPIRIT1 (920 MHz band)
|
STMicroelectronics
|
PTFA092213EL PTFA092213FL |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920-960 MHz
|
Infineon Technologies AG
|