| PART |
Description |
Maker |
| E28F004SC-85 28F008SC 28F016SC G28F008SC-150 G28F0 |
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4 / 8 / AND 16 MBIT
8-MBIT SmartVoltage FlashFile Memory(8M位智能电压闪速存储器)
16-MBIT SmartVoltage FlashFile Memory(16M位智能电压闪速存储器)
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 3.3V PROM, 85 ns, PDSO44
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 字节宽SmartVoltage FlashFile Memory系列486兆比
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 3.3V PROM, 120 ns, PDSO44
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 3.3V PROM, 100 ns, PDSO44
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 2M X 8 FLASH 3.3V PROM, 120 ns, PDSO44
|
Intel Corporation
Intel Corp.
Intel, Corp.
|
| TE28F016S5-110 PA28F004S5-120 PA28F004S5-85 PA28F0 |
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4 8 AND 16 MBIT
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
|
INTEL[Intel Corporation]
|
| PA28F004S3-120 PA28F004S3-150 PA28F008S3-120 PA28F |
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
|
INTEL[Intel Corporation]
|
| DA28F016SV-075 DA28F016SV-070 E28F016SV-075 E28F01 |
WSR2 0.04 Ohms 1% Tolerance
16-MBIT (1 MBIT x 16/ 2 MBIT x 8) FlashFile MEMORY
16-MBIT (1 MBIT x 16 / 2 MBIT x 8) FlashFile MEMORY
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 80 ns, PDSO56
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 70 ns, PDSO56
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 75 ns, PDSO56
|
Intel Corp.
Intel Corporation
Intel, Corp.
|
| 28F008S3 28F016S3 |
3 V FlashFile Memory(3V闪速存储器)
|
Intel Corp.
|
| 28F320S5 29060904 |
5 Volt FlashFile Memory
From old datasheet system
|
Intel
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
| 28F008S |
8-MBit (1 MBit x 8) FLASHFILE Memory(8-M(1 Mx 8)闪速存储器)
|
Intel Corp.
|
| HM530281 HM530281TT HM530281TT-20 HM530281TT-25 HM |
331776 WORD X 8 BIT FRAME MEMORY
331,776 WORD X 8 BIT FRAME MEMORY
|
HITACHI[Hitachi Semiconductor]
|
| M6MGT160S2BVP M6MGB160S2BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
|
