PART |
Description |
Maker |
NAND01G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
HYI18T1G400BF-2.5 HYI18T1G400BF-2.5F HYI18T1G800BC |
1-Gbit Double-Data-Rate-Two SDRAM 256M X 4 DDR DRAM, 0.5 ns, PBGA68 1-Gbit Double-Data-Rate-Two SDRAM 256M X 4 DDR DRAM, 0.6 ns, PBGA68 1-Gbit Double-Data-Rate-Two SDRAM 256M X 4 DDR DRAM, 0.45 ns, PBGA68 1-Gbit Double-Data-Rate-Two SDRAM 64M X 16 DDR DRAM, 0.5 ns, PBGA84 1-Gbit Double-Data-Rate-Two SDRAM
|
Qimonda AG http://
|
HYB18T1G160BC |
1-Gbit Double-Data-Rate-Two SDRAM
|
Qimonda
|
HYB18TC1G160BF-3.7 HYB18TC1G800BF-3.7 HYB18TC1G160 |
1-Gbit Double-Data-Rate-Two SDRAM
|
Qimonda AG http://
|
M58PR512LE M58PR512LE96ZAC5 M58PR512LE96ZAD5 M58PR |
512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
RX2.7GBIT/S TX2.7GBIT/S V23832-T2131-M101 V23832-T |
PAROLI 2 Tx AC, 2.7 Gbit/s 帕罗2个发送,交流2.7千兆/ Parallel Optical Links (PAROLI) - PAROLI?2 Rx AC, 2.7 Gbit/s, Parallel Optical Links (PAROLI) - PAROLI?2 Tx AC, 2.7 Gbit/s, multistandard electrical interface PAROLI 2 Tx AC, 1.25 Gbit/s
|
Infineon Technologies AG
|
NAND01GR3B2BN1E NAND01GW3B2BN6E NAND01GW3B2BZA1E N |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
V23814-K1306-M130 M130 V23814-K1306-MXXX V23815-K1 |
1.25 Gbit/s Rx Receiver 1.25 Gbit/s Tx Transmitter From old datasheet system Parallel Optical Link: PAROLI Tx AC
|
Infineon
|
V23838-M305-M56 |
Transceivers by Form-factor MSA - SFP Multimode 850 nm; 2.125/ 1.062 Gbit/s FC; 1.25 Gbit/s GBE; LC Connector
|
Infineon
|
HYB25D512160BC-6 HYB25D512800BC-6 |
512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60 512-Mbit Double-Data-Rate SDRAM 64M X 8 DDR DRAM, 0.7 ns, PBGA60
|
Qimonda AG
|
HYB18T512160A |
512-Mbit Double-Data-Rate-Two SDRAM
|
Infineon
|