| PART |
Description |
Maker |
| BAS31 |
0.25 A, 110 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
Dual In-Series General-Purpose Controlled-Avalanche Diode
|
VISHAY SEMICONDUCTORS
|
| ES1D ES1B ES1_SERIES_1 ES1 ES1A ES1C |
From old datasheet system
SMA ultra fast low-loss controlled avalanche rectifiers(SMA超快速低损耗控制的雪崩整流
SMA ultra fast low-loss controlled avalanche rectifiers 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| NTE570 |
Silicon Controlled Avalanche Diode
|
NTE[NTE Electronics]
|
| BYD32 BYD32D BYD32G BYD32J BYD32SERIES |
Fast soft-recovery controlled avalanche rectifiers(快速软恢复控制的雪崩整流器) 0.76 A, 200 V, SILICON, SIGNAL DIODE
|
http://
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| DSA35 DSA35-12A DSA35-16A DSA35-18A DSAI35-12A DSA |
Rectifier Diode Avalanche Diode 49 A, 1800 V, SILICON, RECTIFIER DIODE, DO-203AB
Rectifier Diode Avalanche Diode 49 A, 1600 V, SILICON, RECTIFIER DIODE, DO-203AB
Rectifier Diode Avalanche Diode 49 A, 1200 V, SILICON, RECTIFIER DIODE, DO-203AB
Discrete Rectifier Diodes
Rectifier Diode Avalanche Diode
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| DS2-12A DSA2-16A DSA2-12A DSA2-18A DS2-08A |
Rectifier Diode Avalanche Diode
Discrete Rectifier Diodes
Rectifier Diode Avalanche Diode 3.6 A, 1800 V, SILICON, RECTIFIER DIODE
Rectifier Diode Avalanche Diode 3.6 A, 1600 V, SILICON, RECTIFIER DIODE
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| BYD13D BYD13G BYD13J BYD13K BYD13M |
Controlled avalanche rectifiers
|
Shenzhen Taychipst Electronic Co., Ltd
|
| SKNA202 SKNA202_36 SKNA202_40 SKNA202_42 SKNA202_4 |
Avalanche Diode 200 A, 4600 V, SILICON, RECTIFIER DIODE
Avalanche Diode 200 A, 3600 V, SILICON, RECTIFIER DIODE
|
Semikron International
|
| ARS2535 |
35A Controlled Avalanche TVS
|
TAITRON Components Incorporated
|
| BYX39 |
CONTROLLED AVALANCHE RECTIFIER DIODES
|
NXP
|
