PART |
Description |
Maker |
DCA01006 DCA010-TB-E |
Very High-Speed Switching Diode Silicon Epitaxial Planar Type (Anode Common) Very High-Speed Switching Diode
|
Sanyo Semicon Device
|
BAV70 Q68000-A6622 |
Silicon Switching Diode Array (For high-speed switchingFor high-speed switching) 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BAS70-07W BAS7007W Q62702-A1186 |
Silicon Schottky Diode (General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
MC981 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. DIODE FOR HIGH SPEED SWICHING APPLICATION SILICON EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
RD0506T-H RD0506T-TL-H RD0506T12 ENA1574B |
Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode
|
Sanyo Semicon Device
|
200FXH13 E000411 200FXG13 |
DIODE(HIGHSPEEDRECTIFIERAPPLICATIONS) DIODE (HIGH SPEED RECTIFIER APPLICATIONS) From old datasheet system
|
ToshibaSemiconductor Toshiba Semiconductor
|
1PS181 |
High-Speed Double Diode 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
NXP Semiconductors N.V. Philips Semiconductors
|
BAS16W |
High Speed Switching Diode 350mW 0.1 A, 75 V, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp. Micro Commercial Components Corp.
|
CPD63 |
Chip Form: HIGH SPEED SWITCHING DIODE Switching Diode High Speed Switching Diode Chip
|
Central Semiconductor
|
1SS399 |
DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|