PART |
Description |
Maker |
V436664S24V V436664S24VXTG-75PC V436664S24VXTG-10P |
3.3 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED SDRAM MODULE
|
Mosel Vitelic, Corp. MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp Mosel Vitelic Corp
|
W29GL064CB7S W29GL064CH7B W29GL064CL7B W29GL064CT7 |
64M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
V54C3256164VALT6 V54C3256804VAT V54C3256404VAT V54 |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 56Mbit SDRAM.3伏,第二的TSOP /系统芯片的BGA / WBGA包装16米x 162 × 84米4
|
Mosel Vitelic, Corp.
|
PCNET-ISAII |
How to Perform Plug and Play Initiation Key with PCnet-ISA II 100KB (PDF) 如何与PCnet -二执行的ISA即插即用启动密钥100的(PDF格式
|
Future Technology Devices International, Ltd.
|
EBD52UC8AKDA-7B EBD52UC8AKDA EBD52UC8AKDA-6B EBD52 |
512MB DDR SDRAM SO DIMM (64M words x 64 bits, 2 Ranks) 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
|
Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
KBY00U00VA-B450 |
8Gb DDP (512M x16) NAND Flash 4Gb (64M x32 64M x32) 2/CS
|
Samsung semiconductor
|
EBE52UD6ABSA EBE52UD6ABSA-5C-E EBE52UD6ABSA-4A-E |
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 512MB的DDR2 SDRAM内存的SO - DIMM400字64位,2个等级) 512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 64M X 64 DDR DRAM MODULE, 0.6 ns, DMA240
|
Elpida Memory, Inc.
|
IDT72V36100 IDT72V36100L10PF IDT72V36100L15PF IDT7 |
3.3 VOLT HIGH-DENSITY SUPERSYNC⑩ II 36-BIT FIFO 3.3 VOLT HIGH-DENSITY SUPERSYNC II 36-BIT FIFO
|
IDT[Integrated Device Technology]
|
AT49BV2048 |
2-Megabit 3-volt Only Flash Memory(2M浣?3V???瀛???ī 2M bit. 2.7-Volt Read and 2.7-Volt Write. Byte-Write Flash. Bottom Boot
|
Atmel Corp.
|
MC-4R128CEE6C-845 MC-4R128CEE6B MC-4R128CEE6B-653 |
64M X 16 DIRECT RAMBUS DRAM MODULE, 53 ns, DMA184 Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
|
NEC Corp. NEC[NEC]
|