PART |
Description |
Maker |
VG36643241BT-10 VG36643241BT-7 VG3664321412BT VG36 |
CMOS Synchronous Dynamic RAM
|
Vanguard International Semiconductor
|
MB81117822A-84 MB81117822A-125 |
CMOS 2×1M ×8 Bit
Synchronous Dynamic RAM(CMOS 2×1M ×8 位同步动态RAM)
|
Fujitsu Limited
|
GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns 4M X 4 FAST PAGE DRAM, 50 ns, PDSO24 x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24 4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M IC REG LDO 1A 12V SHDN TO220FP-5 null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns 4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
VG3617801BT-8H |
16Mb CMOS Synchronous Dynamic RAM
|
Vanguard International Semiconductor Corporation
|
VG3617161BT VG3617161BT-7 VG3617161BT-8 VG3617161B |
16Mb CMOS Synchronous Dynamic RAM
|
List of Unclassifed Manufac...
|
VG3617161BT VG3617161BT-55 VG3617161BT-6 VG3617161 |
16Mb CMOS Synchronous Dynamic RAM
|
ETC[ETC]
|
VG3617801BT-10 VG3617801BT-8H VG3617801BT-8L VG361 |
16Mb CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
MK32VT1632-10YC |
16777216 Word x 32 Bit Synchronous Dynamic RAM Module (2 BANK)(16M字2位同步动态RAM模块) From old datasheet system 16,777,216 Word x 32 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):
|
OKI SEMICONDUCTOR CO., LTD.
|
HM5216808/5216408C HM5216808CTT-80 |
1048576-word*8-bit*2-bank synchronous dynamic RAM(SSTL-3)
2097152-word*8-bit*2-bank synchronous dynamic RAM(SSTL-3) x8 SDRAM x8 SDRAM内存
|
Hitachi,Ltd.
|
K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32 8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输 (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM48V8104C KM48V8004C KM48V8104CK-45 KM48V8104CKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 45ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns 8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|