| PART |
Description |
Maker |
| STGP12NB60HD |
N-CHANNEL 12A 600V TO-220 POWERMESH IGBT
|
SGS Thomson Microelectronics
|
| RJH60D2DPP-E0-15 |
600V - 12A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJH60D2DPE-15 |
600V - 12A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| 1N1206RA 1N1202A 1N1202RA JAN1N1202A 1N1204RA 1N36 |
12A silicon power rectifier, 200V
12A silicon power rectifier, 1000V
Military Silicon Power Rectifier
12A silicon power rectifier, 400V
12A silicon power rectifier, 600V
12A silicon power rectifier, 800V
|
MICROSEMI[Microsemi Corporation]
http://
|
| IRG4BC30W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| IRG4PC30UD |
600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| IRG4BC30U-S |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) 绝缘栅双极晶体管IGBT的速度超快速（VCES和\u003d 600V电压的Vce（on）的典型。\u003d 1.95V，@和VGE \u003d 15V的，集成电路\u003d 12A条）
600V UltraFast 8-60 kHz Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp.
|
| RFP12N06RLE RFD12N06RLESM RFD12N06RLE FN2407 |
From old datasheet system
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs
12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N沟道,逻辑电平,功率MOS场效应管) 12 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
INTERSIL[Intersil Corporation]
Fairchild Semiconductor, Corp.
|
| HTX12-600 |
600V 12A TRIAC
|
SemiHow Co.,Ltd.
|
| STS12NF30L STS12NF30L0705 |
N-channel 30V - 0.008Ω - 12A SO-8 STripFET II Power MOSFET
N-channel 30V - 0.008ヘ - 12A SO-8 STripFET⑩ II Power MOSFET
|
STMicroelectronics
|
