PART |
Description |
Maker |
HGTH20N40C1D HGTH20N40E1D HGTH20N50C1D HGTH20N50E1 |
CAP 0.056UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 20 A, 400 V, N-CHANNEL IGBT, TO-218AC 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes 20A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
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Intersil, Corp. INTERSIL[Intersil Corporation]
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Q6025G Q6025J6 Q6025K6 Q6025L5 Q6025L6 Q6025L9ALT |
TRIAC|600V V(DRM)|40A I(T)RMS|TO-208AA TRIAC|600V V(DRM)|12A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 12A条口(T)的有效值|20 TRIAC|200V V(DRM)|40A I(T)RMS|TO-218 可控硅| 200伏五(DRM)的| 40A条口(T)的有效值|18 TRIAC|600V V(DRM)|12A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 12A条口T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 200伏五(DRM)的| 5A条口(T)的有效值|20 TRIAC|600V V(DRM)|15A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 15A条口(T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 400V五(DRM)的| 25A条口(T)的有效值|20 TRIAC|600V V(DRM)|4A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 4A条口(T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 800V的五(DRM)的| 12A条口(T)的有效值|20 TRIAC|500V V(DRM)|4A I(T)RMS|TO-220 可控硅| 500V五(DRM)的| 4A条口T)的有效值|20 TRIAC|400V V(DRM)|3A I(T)RMS|TO-202 可控硅| 400V五(DRM)的| 3A条口(T)的有效值|02 TRIAC|400V V(DRM)|4A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 4A条口(T)的有效值|20 TRIAC|200V V(DRM)|12A I(T)RMS|TO-220 可控硅| 200伏五(DRM)的| 12A条口(T)的有效值|20 TRIAC|400V V(DRM)|12A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 12A条口(T)的有效值|20 TRIAC|400V V(DRM)|40A I(T)RMS|TO-218 可控硅| 400V五(DRM)的| 40A条口(T)的有效值|18 TRIAC|400V V(DRM)|10A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 10A条口(T)的有效值|20 TRIAC|600V V(DRM)|40A I(T)RMS|TO-218 可控硅| 600V的五(DRM)的| 40A条口(T)的有效值|18 TRIAC|800V V(DRM)|12A I(T)RMS|TO-220 可控硅| 800V的五(DRM)的| 12A条口(T)的有效值|20 THYRISTOR MODULE|TRIAC 晶闸管模块|可控 TRIAC|800V V(DRM)|15A I(T)RMS|TO-220 可控硅| 800V的五(DRM)的| 15A条口(T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 200伏五(DRM)的| 8A条口(T)的有效值|20 TRIAC|400V V(DRM)|4A I(T)RMS|TO-202 可控硅| 400V五(DRM)的| 4A条口(T)的有效值|02 Transient Voltage Suppressor Diodes 可控硅| 400V五(DRM)的| 8A条口(T)的有效值|20 TRIAC|600V V(DRM)|8A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 8A条口(T)的有效值|20 TRIAC|200V V(DRM)|8A I(T)RMS|TO-220 可控硅| 200伏五(DRM)的| 8A条口(T)的有效值|20 TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 8A条口(T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 700V的五(DRM)的| 25A条口(T)的有效值|20 可控硅| 200伏五(DRM)的| 10A条口(T)的有效值|20 TRIAC|300V V(DRM)|6A I(T)RMS|TO-220 TRIAC|600V V(DRM)|25A I(T)RMS|TO-39 TRIAC|600V V(DRM)|8A I(T)RMS|TO-202 TRIAC|500V V(DRM)|8A I(T)RMS|TO-202 TRIAC|200V V(DRM)|3A I(T)RMS|TO-202 TRIAC|500V V(DRM)|25A I(T)RMS|TO-220 TRIAC|200V V(DRM)|8A I(T)RMS|TO-202 TRIAC|600V V(DRM)|3A I(T)RMS|TO-220 TRIAC|400V V(DRM)|8A I(T)RMS|TO-202 TRIAC|800V V(DRM)|16A I(T)RMS|TO-220 TRIAC|600V V(DRM)|25A I(T)RMS|PRESS-13 TRIAC|500V V(DRM)|15A I(T)RMS|TO-3 TRIAC|500V V(DRM)|40A I(T)RMS|TO-218VAR TRIAC|200V V(DRM)|10A I(T)RMS|TO-203AA TRIAC|200V V(DRM)|15A I(T)RMS|TO-208AA TRIAC|400V V(DRM)|10A I(T)RMS|TO-203AA TRIAC|400V V(DRM)|10A I(T)RMS|FBASE-R-HW30 TRIAC|600V V(DRM)|10A I(T)RMS|FBASE-R-HW30 TRIAC|200V V(DRM)|10A I(T)RMS|FBASE-R-HW30 TRIAC|200V V(DRM)|10A I(T)RMS|TO-208AA TRIAC|600V V(DRM)|10A I(T)RMS|TO-203AA TRIAC|200V V(DRM)|20A I(T)RMS|TO-220 TRIAC|200V V(DRM)|6A I(T)RMS|TO-220 TRIAC|500V V(DRM)|25A I(T)RMS|TO-218VAR TRIAC|600V V(DRM)|25A I(T)RMS|TO-218VAR TRIAC|400V V(DRM)|25A I(T)RMS|TO-218VAR TRIAC|400V V(DRM)|40A I(T)RMS|TO-218VAR TRIAC|200V V(DRM)|40A I(T)RMS|TO-218VAR TRIAC|400V V(DRM)|10A I(T)RMS|TO-8 RF inductor, ceramic core, 5% tol, SMT, RoHS TRIAC|400V V(DRM)|25A I(T)RMS|FBASE-R TRIAC|600V V(DRM)|25A I(T)RMS|FBASE-R TRIAC|500V V(DRM)|25A I(T)RMS|FBASE-R TRIAC|200V V(DRM)|25A I(T)RMS|FBASE-R TRIAC|600V V(DRM)|25A I(T)RMS|TO-220 TRIAC|400V V(DRM)|25A I(T)RMS|TO-220 TRIAC|400V V(DRM)|15A I(T)RMS|TO-220 TRIAC|200V V(DRM)|15A I(T)RMS|TO-220 TRIAC|500V V(DRM)|8A I(T)RMS|TO-220 TRIAC|600V V(DRM)|25A I(T)RMS|TO-208AA TRIAC|400V V(DRM)|40A I(T)RMS|TO-208AA TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|500V V(DRM)|12A I(T)RMS|TO-220 TRIAC|200V V(DRM)|12A I(T)RMS|TO-220AB TRIAC|400V V(DRM)|6A I(T)RMS|TO-220 TRIAC|600V V(DRM)|6A I(T)RMS|TO-220 TRIAC|700V V(DRM)|40A I(T)RMS|TO-218 TRIAC|200V V(DRM)|4A I(T)RMS|TO-220 TRIAC|600V V(DRM)|16A I(T)RMS|TO-220 TRIAC|600V V(DRM)|5A I(T)RMS|TO-220 TRIAC|200V V(DRM)|10A I(T)RMS|TO-220 TRIAC|600V V(DRM)|10A I(T)RMS|TO-220 TRIAC|600VV(DRM)|8AI(T)RMS|TO-220
TRIAC|600VV(DRM)|25AI(T)RMS|FBASE-R
TRIAC|600VV(DRM)|25AI(T)RMS|CAN
TRIAC|600VV(DRM)|25AI(T)RMS|TO-39
TRIAC|800VV(DRM)|25AI(T)RMS|TO-220AB
THYRISTORMODULE|TRIAC
TRIAC|600VV(DRM)|25AI(T)RMS|TO-220AB
TRIAC|600VV(DRM)|25AI(T)RMS|TO-220
TRIAC|600VV(DRM)|25AI(T)RMS|TO-218
TRIAC|600VV(DRM)|25AI(T)RMS|TO-218VAR
TRIAC|600VV(DRM)|25AI(T)RMS|PRESS-13
TRIAC|200V V(DRM)|25A I(T)RMS|TO-220
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Samsung Semiconductor Co., Ltd. Vishay Intertechnology, Inc. STMicroelectronics N.V. Xicon Passive Components Anpec Electronics, Corp. Littelfuse, Inc. International Rectifier, Corp. Motorola Mobility Holdings, Inc. Electronic Theatre Controls, Inc. Mitsubishi Electric, Corp. Jiangsu Changjiang Electronics Technology Co., Ltd. GTM, Corp.
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IRFP460 6179 -IRFP460 |
N-Channel 500V-0.22惟-20A- TO-247 PowerMESH MOSFET(N娌??MOSFET) N-Channel 500V-0.22Ω-20A- TO-247 PowerMESH MOSFET(N沟道MOSFET) N沟道500V -0.22Ω- 20A条至247 PowerMESH MOSFET的(不适用沟道MOSFET的) N-Channel Power MOSFET N - CHANNEL 500V - 0.22 - 20 A - TO-247 PowerMESH TM MOSFET From old datasheet system N - CHANNEL 500V - 0.22 ohm - 20 A - TO-247 PowerMESH] MOSFET
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IXYS, Corp. 意法半导 ST Microelectronics STMicroelectronics
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IXTL15N20 IXTL8P40 IXTL5N65 IXTL5P40 IXTL6N60 IXTM |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-254 TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 8A I(D) | TO-254 TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-254 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-254 TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-204AC TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 24A I(D) | TO-254 TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-218VAR TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 6A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-254 晶体管| MOSFET的| P通道| 200伏五(巴西)直| 10A条(丁)|254 TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 5A I(D) | TO-254 晶体管| MOSFET的| N沟道|650V五(巴西)直| 5A条(丁)|54 TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-3 晶体管| MOSFET的| P通道| 150伏五(巴西)直| 7A条(丁)| TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-210AC 晶体管| MOSFET的| N沟道| 500V五(巴西)直|3A条(丁)|10AC TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-220 晶体管| MOSFET的| P通道| 500V五(巴西)直| 5A条(丁)|220
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MITSUMI ELECTRIC CO., LTD. Infineon Technologies AG HIROSE ELECTRIC Co., Ltd.
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STW20NM50 |
N-CHANNEL 500V - 0.20ohm - 20A TO-247 MDmesh?┬ower MOSFET N-CHANNEL Power MOSFET N-CHANNEL 500V - 0.20ohm - 20A TO-247 MDmesh⑩Power MOSFET N-CHANNEL 500V - 0.20 OHM - 20A TO-247 MDMESH POWER MOSFET N-CHANNEL 500V - 0.20ohm - 20A TO-247 MDmesh?Power MOSFET N-CHANNEL 500V - 0.20 OHM - 20A TO-247 MDMESH POWER MOSFET
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??????浣? ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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STP22NM50 STP22NM50FP STB22NM50 STB22NM50-1 |
N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PAK/I2PAK MDmeshPower MOSFET N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh⑩Power MOSFET N沟道500V - 0.16ohm - 20A条TO-220/FP/D2PAK/I2PAK的MDmesh⑩功率MOSFET
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STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V.
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STW20NM50FD |
N-CHANNEL Power MOSFET N-CHANNEL 500V - 0.22ohm - 20A TO-247 FDmesh Power MOSFET with FAST DIODE N-CHANNEL 500V 0.22 OHM 20A TO-247 FDMESH POWER MOSFET N-CHANNEL 500V - 0.22ohm - 20A TO-247 FDmesh⑩ Power MOSFET with FAST DIODE N-CHANNEL 500V 0.22 OHM 20A TO-247 FDMESH POWER MOSFET
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STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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STP20NK50Z STW20NK50Z |
N-CHANNEL POWER MOSFET N-CHANNEL 500V - 0.23ohm - 20A TO-220/TO-247 Zener-Protected SuperMESH⑩Power MOSFET N-CHANNEL 500V - 0.23 OHM - 20A TO-220/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET N-CHANNEL 500V - 0.23ohm - 20A TO-220/TO-247 Zener-Protected SuperMESHPower MOSFET N-CHANNEL 500V - 0.23ohm - 20A TO-220/TO-247 Zener-Protected SuperMESH?Power MOSFET
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D HGTP10N50E1 |
10A 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes 10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes 17.5 A, 400 V, N-CHANNEL IGBT, TO-220AB
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INTERSIL[Intersil Corporation] Intersil, Corp.
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604B 1002A 1502A 602BI 1502BI |
TRIAC|400V V(DRM)|6A I(T)RMS|TO-218VAR TRIAC|400V V(DRM)|15A I(T)RMS|TO-218VAR SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating TRIAC|400V V(DRM)|10A I(T)RMS|TO-218VAR 可控硅| 400V五(DRM)的| 10A条口(T)的有效值|18VAR
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Rochester Electronics, LLC
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OM6559SP1 OM6558SP1 OM6545SP1 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 25A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五(巴西)国际消费电子展|5A条(c)的|园区 TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 21A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五(巴西)国际消费电子展| 21A条(c)的|园区 TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 49A I(C) | SIP 晶体管| IGBT的|正陈| 500V五(巴西)国际消费电子展|9A一(c)|园区
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Electronic Theatre Controls, Inc. OKI SEMICONDUCTOR CO., LTD.
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