PART |
Description |
Maker |
IRFW610B IRFI610B IRFI610BTUFP001 IRFW610BTMFP001 |
200V N-Channel B-FET / Substitute of IRFW610A 200V N-Channel MOSFET 200V N-Channel B-FET / Substitute of IRFI610A
|
FAIRCHILD[Fairchild Semiconductor]
|
IRF630B IRFS630B IRF630BFP001 IRF630BTSTUFP001 IRF |
200V N-Channel MOSFET 200V N-Channel B-FET / Substitute of IRF630 & IRF630A 200V N-Channel B-FET / Substitute of IRFS630 & IRFS630A
|
FAIRCHILD[Fairchild Semiconductor]
|
FQA19N20C |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQI19N20C FQB19N20C FQB19N20CTM |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQI32N20C FQB32N20C FQB32N20CTM |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET 28 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRFNL210B EA0610P |
200V N-Channel MOSFET 200V N-Channel B-FET TO-92L
|
FAIRCHILD[Fairchild Semiconductor]
|
SFI9630TU |
200V P-Channel A-FET
|
Fairchild Semiconductor
|
IRLI610A IRLW610A IRLI610ATU IRLW610ATM |
Advanced Power MOSFET 200V N-Channel Logic Level A-FET
|
Fairchild Semiconductor
|
IRFG5210 IRFG5210N IRFG5210P IRFG5210-15 |
Simple Drive Requirements 200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY 200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package 200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package 200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
SFR9220 SFRU9220 SFU9220 SFR_U9220 SFR9220TM SFR92 |
P-CHANNEL POWER MOSFET 200V P-Channel A-FET / Substitute of IRFR9220 Advanced Power MOSFET Avalanche Rugged Technology
|
FAIRCHILD[Fairchild Semiconductor]
|
STD5NB20 6365 |
N - CHANNEL 200V - 0.70ohm - 5A DPAK PowerMESHO MOSFET From old datasheet system N - CHANNEL 200V - 0.70 - 5A DPAK PowerMESH TM MOSFET N - CHANNEL 200V - 0.70 Ohm - 5A DPAK PowerMESH MOSFET
|
STMicroelectronics SGS Thomson Microelectronics
|
OM6039SM |
200V , 9 Amp, N-Channel Power MOSFET(200V , 9A,N沟道,功率MOS场效应管) 00V安培,N沟道功率MOSFET(为200V9A条,沟道,功率马鞍山场效应管
|
HIROSE ELECTRIC Co., Ltd.
|